欢迎访问ic37.com |
会员登录 免费注册
发布采购

SM25609BDT-7.5 参数 Datasheet PDF下载

SM25609BDT-7.5图片预览
型号: SM25609BDT-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM Module, 32MX72, 4.6ns, CMOS, DIMM-168]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 11 页 / 151 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
 浏览型号SM25609BDT-7.5的Datasheet PDF文件第3页浏览型号SM25609BDT-7.5的Datasheet PDF文件第4页浏览型号SM25609BDT-7.5的Datasheet PDF文件第5页浏览型号SM25609BDT-7.5的Datasheet PDF文件第6页浏览型号SM25609BDT-7.5的Datasheet PDF文件第7页浏览型号SM25609BDT-7.5的Datasheet PDF文件第8页浏览型号SM25609BDT-7.5的Datasheet PDF文件第9页浏览型号SM25609BDT-7.5的Datasheet PDF文件第11页  
PC-133 HSDRAM  
256MB, 512MB DIMM  
Preliminary Data Sheet  
512MB  
Serial Presence Detect (SPD) for PC-133 DIMMs  
256MB  
512MB  
256MB  
Byte Description  
** Hex Code **  
0
1
2
3
4
5
6
Number of bytes written into EEPROM  
Total number of SPD bytes  
Memory Type  
Number of Row Addresses  
Number of Column Addresses  
Number of Module Banks  
Module Data Width  
128  
256  
SDRAM  
13  
10  
1
x64  
x72  
0
128  
256  
SDRAM  
13  
10  
2
x64  
x72  
80  
08  
04  
0D  
0A  
01  
40  
48  
00  
01  
75  
46  
00  
02  
82  
08  
00  
08  
01  
8F  
04  
06  
01  
01  
00  
0E  
80  
08  
04  
0D  
0A  
02  
40  
48  
00  
01  
75  
46  
00  
02  
82  
08  
00  
08  
01  
8F  
04  
06  
01  
01  
00  
0E  
7
8
Module Data Width (cont’d)  
Voltage Interface Levels  
0
LVTTL  
7.5 ns  
4.6 ns  
LVTTL  
7.5 ns  
4.6 ns  
9
10  
11  
Cycle Time at max CAS Latency  
SDRAM Clock Access Time  
DIMM config (non-parity, parity, ECC)  
--- Non-parity ---  
--- ECC ---  
12  
13  
14  
Refresh Rate and Type  
Primary SDRAM Width  
Error Checking Data Width  
--- 7.8us / Self ---  
x8  
N/A  
x8  
x8  
N/A  
x8  
x64  
x72  
15  
16  
17  
18  
19  
20  
21  
22  
Min. CAS-to-CAS Delay (tCCD)  
Burst Lengths Supported  
Number of Banks on SDRAM Device  
CAS Latencies Supported  
CS Latency  
Write Latency  
SDRAM Module Attributes  
SDRAM Device Attributes  
1 clk  
1 clk  
--- 1,2,4,8,Full Pg ---  
4
2,3  
0
4
2,3  
0
0
0
+/-10% Vdd, Precharge All,  
Wr-1/RdBrst  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36-61  
62  
63  
Min. Clock Cycle Time at CL=2  
Clock Access Time at CL=2 (tAC2)  
Min. Clock Cycle Time at CL=1  
Clock Access Time at CL=1 (tAC1)  
Min. Row Precharge Time (tRP)  
Min. Row-to-Row Delay (tRRD)  
Min. RAS-to-CAS Delay (tRCD)  
Min. RAS Pulse Width (tRAS)  
Density of each bank on module  
Cmd/Addr input set-up time  
Cmd/Addr input hold time  
Data input set-up time  
10 ns  
6 ns  
N/A  
10 ns  
6 ns  
N/A  
A0  
60  
00  
00  
0F  
0F  
0F  
26  
40  
15  
08  
15  
08  
00  
02  
A3  
B5  
A0  
60  
00  
00  
0F  
0F  
0F  
26  
40  
15  
08  
15  
08  
00  
02  
A4  
B6  
N/A  
N/A  
15 ns  
15 ns  
15 ns  
37.5 ns  
256MB  
15 ns  
15 ns  
15 ns  
37.5 ns  
256MB  
1.5 ns  
0.8 ns  
1.5 ns  
0.8 ns  
Data input hold time  
Superset Information  
SPD Rev.  
-
-
-
-
2
Checksum for bytes 0-62  
non-ECC  
ECC  
64-71  
72  
73-90  
91,92  
93,94  
95-98  
JEDEC ID code  
Enhanced Memory Systems  
7F32FFFFFFFFFFFF  
Manufacturing Location  
Manufacturer’s Part #  
PCB Rev. Code  
Manufacturing Date  
Assembly Serial #  
-
-
xxxx  
xxxx  
rrrr  
xxxx  
xxxx  
rrrr  
SM25608DT  
-
SM51208DT  
-
yyww code  
serial number  
open  
yyww  
ssss  
00  
yyww  
ssss  
00  
99-125 Manufacturer’s Specific Data  
126  
127  
Intel specification frequency  
Intel specification CL and clock support  
133MHz  
64  
AF  
64  
FF  
-
-
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921  
PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com  
1999 Enhanced Memory Systems. All rights reserved.  
The information contained herein is subject to change without notice.  
Page 10 of 11  
Revision 1.0