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FM28V100 参数 Datasheet PDF下载

FM28V100图片预览
型号: FM28V100
PDF下载: 下载PDF文件 查看货源
内容描述: 为1Mbit字节宽度的F- RAM存储器 [1Mbit Bytewide F-RAM Memory]
分类和应用: 存储
文件页数/大小: 13 页 / 315 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM28V100 - 128Kx8 FRAM
Read Cycle AC Parameters
(T
A
= -40° C to +85° C, C
L
= 30 pF, unless otherwise specified)
V
DD
2.0 to 2.7V
V
DD
2.7 to 3.6V
Symbol Parameter
Min
Max
Min
Max
t
RC
Read Cycle Time
105
-
90
-
t
CE
Chip Enable Access Time
-
70
-
60
t
AA
Address Access Time
-
105
-
90
t
OH
Output Hold Time
20
-
20
-
t
AAP
Page Mode Address Access Time
-
40
-
30
t
OHP
Page Mode Output Hold Time
3
-
3
-
t
CA
Chip Enable Active Time
70
-
60
-
t
PC
Precharge Time
35
-
30
-
t
AS
Address Setup Time (to /CE1, CE2 active)
0
-
0
-
t
AH
Address Hold Time (/CE-controlled)
70
-
60
-
t
OE
Output Enable Access Time
-
25
-
15
t
HZ
Chip Enable to Output High-Z
-
10
-
10
t
OHZ
Output Enable High to Output High-Z
-
10
-
10
Write Cycle AC Parameters
(T
A
= -40° C to +85° C, unless otherwise specified)
V
DD
2.0 to 2.7V
V
DD
2.7 to 3.6V
Symbol Parameter
Min
Max
Min
Max
t
WC
Write Cycle Time
105
-
90
-
t
CA
Chip Enable Active Time
70
-
60
-
t
CW
Chip Enable to Write Enable High
70
-
60
-
t
PC
Precharge Time
35
-
30
-
t
PWC
Page Mode Write Enable Cycle Time
40
-
30
-
t
WP
Write Enable Pulse Width
22
-
18
-
t
AS
Address Setup Time (to /CE1, CE2 active)
0
-
0
-
t
AH
Address Hold Time (/CE-controlled)
70
-
60
-
t
ASP
Page Mode Address Setup Time
(to /WE low)
8
-
5
-
t
AHP
Page Mode Address Hold Time
(to /WE low)
20
-
15
-
t
WLC
Write Enable Low to Chip Disabled
30
-
25
-
t
WLA
Write Enable Low to A(16:3) Change
30
-
25
-
t
AWH
A(16:3) Change to Write Enable High
105
-
90
-
t
DS
Data Input Setup Time
20
-
15
-
t
DH
Data Input Hold Time
0
-
0
-
t
WZ
Write Enable Low to Output High Z
-
10
-
10
t
WX
Write Enable High to Output Driven
5
-
5
-
t
WS
Write Enable to CE-Active Setup Time
0
-
0
-
t
WH
Write Enable to CE-Inactive Hold Time
0
-
0
-
Notes
1
This parameter is characterized but not 100% tested.
2
The relationship between CE’s and /WE determines if a /CE- or /WE-controlled write occurs.
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
1,2
1,2
Power Cycle Timing
(T
A
= -40° C to +85° C, V
DD
= 2.0V to 3.6V unless otherwise specified)
Symbol
Parameter
Min
Max
t
VR
V
DD
Rise Time
50
-
t
VF
V
DD
Fall Time
100
-
t
PU
Power Up (V
DD
min) to First Access Time
250
-
t
PD
Last Access to Power Down (V
DD
min)
0
-
Notes
1
Slope measured at any point on V
DD
waveform.
Units
µs/V
µs/V
µs
µs
Notes
1
1
Rev. 1.2
May 2010
Page 8 of 13