FM25L04B - 4Kb 3V SPI F-RAM
AC Parameters (TA = -40° C to + 85° C, VDD = 2.7V to 3.6V, CL = 30pF, unless otherwise specified)
Symbol
fCK
tCH
Parameter
Min
0
22
22
10
10
Max
Units
MHz
ns
Notes
SCK Clock Frequency
Clock High Time
Clock Low Time
20
1
1
tCL
ns
tCSU
tCSH
tOD
tODV
tOH
tD
Chip Select Setup
Chip Select Hold
Output Disable Time
Output Data Valid Time
Output Hold Time
Deselect Time
ns
ns
20
20
ns
2
ns
0
60
ns
ns
tR
Data In Rise Time
Data In Fall Time
Data Setup Time
50
50
ns
2,3
2,3
tF
ns
tSU
5
5
10
10
ns
tH
Data Hold Time
ns
tHS
/HOLD Setup Time
/HOLD Hold Time
/HOLD Low to Hi-Z
/HOLD High to Data Active
ns
tHH
tHZ
ns
20
20
ns
2
2
tLZ
Notes
ns
1. tCH + tCL = 1/fCK
.
2. For Clock High Time tCH ≤ 35 ns, the parameter tODV is extended such that tCH + tODV ≤ 65 ns.
3. This parameter is characterized but not 100% tested.
4. Rise and fall times measured between 10% and 90% of waveform.
Capacitance (TA = 25° C, f=1.0 MHz, VDD = 3.3V)
Symbol
CO
Parameter
Output Capacitance (SO)
Input Capacitance
Min
-
-
Max
8
6
Units
pF
pF
Notes
1
1
CI
Notes
1. This parameter is characterized but not 100% tested.
2. Slope measured at any point on VDD waveform.
AC Test Conditions
Input Pulse Levels
10% and 90% of VDD
Input rise and fall times
Input and output timing levels
Output Load Capacitance
5 ns
0.5 VDD
30 pF
Data Retention
Symbol
TDR
Parameter
Min
10
Max
Units
Notes
@
@
@
+85ºC
+80ºC
+75ºC
-
-
-
Years
Years
Years
19
38
Rev. 1.3
Feb. 2011
Page 10 of 14
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
