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FM25L256 参数 Datasheet PDF下载

FM25L256图片预览
型号: FM25L256
PDF下载: 下载PDF文件 查看货源
内容描述: 256KB串行FRAM存储器3V - 扩展级温度 [256Kb FRAM Serial 3V Memory - Extended Temp]
分类和应用: 存储
文件页数/大小: 14 页 / 148 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
 浏览型号FM25L256的Datasheet PDF文件第5页浏览型号FM25L256的Datasheet PDF文件第6页浏览型号FM25L256的Datasheet PDF文件第7页浏览型号FM25L256的Datasheet PDF文件第8页浏览型号FM25L256的Datasheet PDF文件第10页浏览型号FM25L256的Datasheet PDF文件第11页浏览型号FM25L256的Datasheet PDF文件第12页浏览型号FM25L256的Datasheet PDF文件第13页  
FM25L256 Extended Temp.  
Electrical Specifications  
Absolute Maximum Ratings  
Symbol  
Description  
Ratings  
VDD  
VIN  
Power Supply Voltage with respect to VSS  
Voltage on any pin with respect to VSS  
-1.0V to +5.0V  
-1.0V to +5.0V  
and VIN < VDD+1.0V  
-55°C to + 125°C  
300° C  
TSTG  
TLEAD  
VESD  
Storage Temperature  
Lead Temperature (Soldering, 10 seconds)  
Electrostatic Discharge Voltage  
- Human Body Model (JEDEC Std JESD22-A114-B)  
- Charged Device Model (JEDEC Std JESD22-C101-A)  
- Machine Model (JEDEC Std JESD22-A115-A)  
Package Moisture Sensitivity Level  
3kV  
1kV  
100V  
MSL-1  
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress  
rating only, and the functional operation of the device at these or any other conditions above those listed in the operational  
section of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may  
D
E
affect device reliability.  
= 3.0V to 3.6V unless otherwiseDspecified)  
DC Operating Conditions (TA = -25°C to +85°C, VDD  
Symbol  
VDD  
IDD  
Parameter  
Power Supply Voltage  
Power Supply Current  
Min  
3.0  
Typ  
-
Max  
Units  
Notes  
S
N
3.6  
V
N 1  
@
@
SCK = 1.0 MHz  
SCK = 20.0 MHz  
-
-
0.3  
5.0  
mA  
mA  
G
ME  
I
ISB  
Standby Current  
2
B
@
@
@
@
TA = 25  
TA = 55  
TA = 70  
TA = 85  
°
°
°
°
C
C
C
C
-
-
-
1.0  
2.5  
5.0  
µA  
S
A 6  
µ
M
5
µA  
E
2µA  
-
10.0  
O
L
ILI  
Input Leakage Current  
Output Leakage Current  
Input High Voltage  
Input Low Voltage  
Output High Voltage  
R
-
-
µA  
A
3
3
±1  
D
±15  
ILO  
VIH  
VIL  
VOH  
µ
C
2
0.7 VDD  
VDD + 0.5  
V
V
V
E
M
-0.3  
VDD – 0.8  
0.3 VDD  
-
W
F
:
@
IOH = -2 mA  
E
e
VOL  
Output Low Voltage  
@
Input Hysteresis  
-
0.4  
-
V
V
v
IOL = 2 mA  
i
T
N
t
0.05 VDD  
a
VHYS  
4
Notes  
O
n
1. SCK toggling between VDD-0.3V and VSS, other inputs  
2. SCK = SI = /CS=VDD. All inputs VSS or VDD  
3. VSS VIN VDD and VSS VOUT VDD  
4. This parameter is characterized but not 100% tested.  
r
VSS or VDD-0.3V.  
R
.
e
N
t
l
.
O
A
F
Rev. 2.3  
March 2007  
Page 9 of 14  
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