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FM25H20-G 参数 Datasheet PDF下载

FM25H20-G图片预览
型号: FM25H20-G
PDF下载: 下载PDF文件 查看货源
内容描述: 2MB串行3V F-RAM存储器 [2Mb Serial 3V F-RAM Memory]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 15 页 / 335 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
 浏览型号FM25H20-G的Datasheet PDF文件第6页浏览型号FM25H20-G的Datasheet PDF文件第7页浏览型号FM25H20-G的Datasheet PDF文件第8页浏览型号FM25H20-G的Datasheet PDF文件第9页浏览型号FM25H20-G的Datasheet PDF文件第11页浏览型号FM25H20-G的Datasheet PDF文件第12页浏览型号FM25H20-G的Datasheet PDF文件第13页浏览型号FM25H20-G的Datasheet PDF文件第14页  
FM25H20 - 2Mb SPI FRAM  
Electrical Specifications  
Absolute Maximum Ratings  
Symbol  
VDD  
Description  
Ratings  
-1.0V to +4.5V  
-1.0V to +4.5V  
and VIN < VDD+1.0V  
-55°C to + 125°C  
260° C  
Power Supply Voltage with respect to VSS  
Voltage on any pin with respect to VSS  
VIN  
TSTG  
TLEAD  
VESD  
Storage Temperature  
Lead Temperature (Soldering, 10 seconds)  
Electrostatic Discharge Voltage  
- Human Body Model  
(
AEC-Q100-002 Rev. D  
AEC-Q100-011 Rev. B  
AEC-Q100-003 Rev. E  
Package Moisture Sensitivity Level  
)
2kV  
1kV  
- Charged Device Model  
- Machine Model  
(
)
(
)
200V  
MSL-1 (TDFN)  
MSL-1 (EIAJ)  
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating  
only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this  
specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.  
DC Operating Conditions (TA = -40°C to + 85°C, VDD = 2.7V to 3.6V unless otherwise specified)  
Symbol Parameter  
Min  
Typ  
Max  
Units  
Notes  
VDD  
IDD  
Power Supply Voltage  
2.7  
3.3  
3.6  
V
Power Supply Current  
1
@
@
C = 1 MHz  
-
-
1.0  
mA  
mA  
C = 40 MHz  
10.0  
ISB  
Standby Current  
@ TA = 25°C  
2
3
µ
µ
A
A
80  
-
150  
270  
@ TA = 85°C  
IZZ  
Sleep Mode Current  
@ TA = 25°C  
µ
µ
A
A
3
-
5
@ TA = 85°C  
8
ILI  
Input Leakage Current  
Output Leakage Current  
Input Low Voltage  
Input High Voltage  
Output Low Voltage  
-
-
µ
µ
V
A
A
4
4
1
1
ILO  
VIL  
VIH  
VOL  
-0.4  
0.7 VDD  
0.3 VDD  
VDD + 0.5  
V
V
V
@
IOL = 1.6 mA  
-
0.4  
-
VOH  
Output High Voltage  
V
DD – 0.2  
@ IOH = -100 µA  
Notes  
1. C toggling between VDD-0.2V and VSS, other inputs VSS or VDD-0.2V.  
2. /S=VDD. All inputs VSS or VDD  
3. In Sleep mode and /S=VDD. All inputs VSS or VDD  
4. SS VIN VDD and VSS VOUT VDD  
.
.
V
.
Rev. 2.2  
Sept. 2010  
Page 10 of 15