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FM22LD16-55-BG 参数 Datasheet PDF下载

FM22LD16-55-BG图片预览
型号: FM22LD16-55-BG
PDF下载: 下载PDF文件 查看货源
内容描述: 4Mbit的F-RAM存储器 [4Mbit F-RAM Memory]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 14 页 / 211 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
 浏览型号FM22LD16-55-BG的Datasheet PDF文件第5页浏览型号FM22LD16-55-BG的Datasheet PDF文件第6页浏览型号FM22LD16-55-BG的Datasheet PDF文件第7页浏览型号FM22LD16-55-BG的Datasheet PDF文件第8页浏览型号FM22LD16-55-BG的Datasheet PDF文件第10页浏览型号FM22LD16-55-BG的Datasheet PDF文件第11页浏览型号FM22LD16-55-BG的Datasheet PDF文件第12页浏览型号FM22LD16-55-BG的Datasheet PDF文件第13页  
FM22LD16 - 256Kx16 FRAM
Read Cycle AC Parameters
(T
A
= -40° C to + 85° C, V
DD
= 2.7V to 3.6V unless otherwise specified)
Symbol
t
RC
t
CE
t
AA
t
OH
t
AAP
t
OHP
t
CA
t
PC
t
BA
t
AS
t
AH
t
OE
t
HZ
t
OHZ
t
BHZ
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Hold Time
Page Mode Address Access Time
Page Mode Output Hold Time
Chip Enable Active Time
Precharge Time
/UB, /LB Access Time
Address Setup Time (to /CE low)
Address Hold Time (/CE-controlled)
Output Enable Access Time
Chip Enable to Output High-Z
Output Enable High to Output High-Z
/UB, /LB High to Output High-Z
Min
110
-
-
20
-
5
55
55
-
0
55
-
-
-
-
Max
-
55
110
-
25
-
-
-
20
-
-
15
10
10
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
1
Write Cycle AC Parameters
(T
A
= -40° C to + 85° C, V
DD
= 2.7V to 3.6V unless otherwise specified)
Symbol
t
WC
t
CA
t
CW
t
PC
t
BHZ
t
PWC
t
WP
t
AS
t
ASP
t
AHP
t
WLC
t
WLA
t
AWH
t
DS
t
DH
t
WZ
t
WX
t
WS
t
WH
Parameter
Write Cycle Time
Chip Enable Active Time
Chip Enable to Write Enable High
Precharge Time
/UB, /LB High to Output High-Z
Page Mode Write Enable Cycle Time
Write Enable Pulse Width
Address Setup Time (to /CE low)
Page Mode Address Setup Time
(to /WE low)
Page Mode Address Hold Time
(to /WE low)
Write Enable Low to /CE High
Write Enable Low to A(17:2) Change
A(17:2) Change to Write Enable High
Data Input Setup Time
Data Input Hold Time
Write Enable Low to Output High Z
Write Enable High to Output Driven
Write Enable to /CE Low Setup Time
Write Enable to /CE High Hold Time
Min
110
55
55
55
5
25
16
0
8
15
25
25
110
14
0
-
10
0
0
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
2
2
Notes
1
This parameter is characterized but not 100% tested.
2
The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. The parameters t
WS
and t
WH
are not tested.
Capacitance
(T
A
= 25° C , f=1 MHz, V
DD
= 3.3V)
Symbol
Parameter
C
I/O
Input/Output Capacitance (DQ)
C
IN
Input Capacitance
Min
-
-
Max
8
6
Units
pF
pF
Notes
Rev. 1.0
Oct. 2008
Page 9 of 14