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FM22L16 参数 Datasheet PDF下载

FM22L16图片预览
型号: FM22L16
PDF下载: 下载PDF文件 查看货源
内容描述: 4Mbit的FRAM存储器 [4Mbit FRAM Memory]
分类和应用: 存储
文件页数/大小: 15 页 / 190 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM22L16  
Power Cycle Timing (TA = -40° C to + 85° C, VDD = 2.7V to 3.6V unless otherwise specified)  
Symbol  
tPU  
tPD  
tVR  
tVF  
tZZEN  
tZZEX  
Notes  
Parameter  
Min  
450  
Max  
Units  
Notes  
Power-Up to First Access Time (after VDD min)  
Power-Down to Last Access Time (prior to VTP)  
VDD Rise Time  
-
0
-
-
0
-
µs  
µs  
µs/V  
µs/V  
µs  
50  
100  
-
1,2  
1,2  
VDD Fall Time  
Sleep Mode Enter Time (/ZZ low to /CE don’t care)  
Sleep Mode Exit Time (/ZZ high to 1st access after wakeup)  
450  
µs  
1
2
Slope measured at any point on VDD waveform.  
Ramtron cannot test or characterize all VDD power ramp profiles. The behavior of the internal circuits is difficult to predict  
when VDD is below the level of a transistor threshold voltage. Ramtron strongly recommends that VDD power up faster than  
100ms through the range of 0.4V to 1.0V.  
Data Retention (VDD = 2.7V to 3.6V)  
Parameter  
Min  
Units  
Notes  
Data Retention  
10  
Years  
AC Test Conditions  
Input Pulse Levels  
0 to 3V  
3 ns  
1.5V  
30pF  
Input rise and fall times  
Input and output timing levels  
Output Load Capacitance  
Read Cycle Timing 1 (/CE low, /OE low)  
Read Cycle Timing 2 (/CE-controlled)  
Rev. 1.0  
Mar. 2007  
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