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FM18L08-70-SG 参数 Datasheet PDF下载

FM18L08-70-SG图片预览
型号: FM18L08-70-SG
PDF下载: 下载PDF文件 查看货源
内容描述: 256KB的字节宽度FRAM存储器 [256Kb Bytewide FRAM Memory]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 13 页 / 126 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM18L08
Electrical Specifications
Absolute Maximum Ratings
Symbol
Description
V
DD
Power Supply Voltage with respect to V
SS
V
IN
Voltage on any signal pin with respect to V
SS
T
STG
T
LEAD
V
ESD
Storage temperature
Lead temperature (Soldering, 10 seconds)
Electrostatic Discharge Voltage
- Human Body Model
(JEDEC Std JESD22-A114-B)
- Machine Model
(JEDEC Std JESD22-A115-A)
Package Moisture Sensitivity Level
Ratings
-1.0V to +5.0V
-1.0V to +5.0V and V
IN
< V
DD
+1V
-55°C to +125°C
300° C
4kV
400V
MSL-1 (SOIC/DIP)
MSL-2 (TSOP)
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating
only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this
specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
DC Operating Conditions
(T
A
= -40° C to + 85° C, V
DD
= 3.0V to 3.65V)
Symbol
Parameter
Min
Typ
Max
V
DD
Power Supply
3.0
3.65
I
DD
V
DD
Supply Current – Active
-
7
15
I
SB1
Standby Current – TTL
400
I
SB2
Standby Current – CMOS
7
15
I
LI
Input Leakage Current
-
10
I
LO
Output Leakage Current
-
10
V
IH
Input High Voltage
2.0
V
DD
+ 0.5
V
IL
Input Low Voltage
-0.5
0.8
V
OH
Output High Voltage (
I
OH
= -1.0 mA)
2.4
-
V
OL
Output Low Voltage (
I
OL
= 3.2 mA)
-
0.4
Notes
1.
V
DD
= 3.65V, /CE cycling at minimum cycle time. All inputs at CMOS levels, all outputs unloaded.
2.
V
DD
= 3.65V, /CE at V
IH
, All other pins at TTL levels.
3.
V
DD
= 3.65V, /CE at V
DD
, All other pins at CMOS levels.
4.
V
IN
, V
OUT
between V
DD
and V
SS
.
Units
V
mA
µA
µA
µA
µA
V
V
V
V
Notes
1
2
3
4
4
Rev. 3.4
July 2007
6 of 13