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FM1105 参数 Datasheet PDF下载

FM1105图片预览
型号: FM1105
PDF下载: 下载PDF文件 查看货源
内容描述: 非易失性5V双路国家保护程序 [Nonvolatile 5V Dual State Saver]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 8 页 / 118 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM1105 NV Dual State Saver
AC Parameters
(T
A
= -40° C to + 85° C, V
DD
= 4.5V to 5.5V, C
L
= 30 pF unless otherwise specified)
Symbol
Parameter
Min
Max
f
MAX
Maximum Clock Frequency
1
t
LOW
CLK Low Period
0.3
t
HIGH
CLK High Period
0.3
t
PD
Propagation delay CLK to Q
N
50
t
HZ
EN Low to Q
N
Hi-Z
25
t
R
Input Rise Time
100
t
F
Input Fall Time
100
t
DS
Data (D
N
) Setup Time to CLK
5
t
DH
Data (D
N
) Hold Time after CLK
10
t
EHD
EN Hold Time (EN High after CLK
)
0
the
EN High Time
5
t
EL
EN Low Time
2
Notes
1.
This parameter is characterized but not tested.
Units
MHz
µs
µs
ns
ns
ns
ns
ns
ns
µs
µs
µs
Notes
1
1
1
Power Cycling and Data Retention
(T
A
= -40° C to + 85° C, V
DD
= 4.5V to 5.5V, unless otherwise specified)
Symbol
Parameter
Min
Max
Units
Nonvolatile Data Retention Time
45
-
years
t
VDR
V
DD
Rise Time
25
-
µs/V
t
VDF
V
DD
Fall Time
50
-
µs/V
t
RES
EN High to Q
N
Restore Time
-
0.5
µs
t
PDS
EN Low to Power Down Time
1
-
µs
t
EHFC
EN High to First Clock (CLK
) after Power Up
4
-
µs
Notes
1.
2.
3.
Notes
1
1
2
3
Slope measured at any point on V
DD
waveform.
After power up, when EN goes high the nonvolatile latches are read and the values restored to the outputs Q
N
.
After power up, this is the minimum time required before a state change operation may occur. EN and V
DD
may be
coincident at power up, and in this case t
EHFC
time is referenced to V
DD
(min) and CLK
.
Capacitance
(T
A
= 25° C , f=1.0 MHz, V
DD
= 5.0V)
Symbol
Parameter
C
I
Input Capacitance
Notes
1.
This parameter is characterized but not tested.
Min
-
Max
8
Units
pF
Notes
1
Rev. 1.1
Aug. 2007
Page 5 of 8