Low Power Self-Refresh Mode Option
/RE
tRP2
A
0-10
tMSU
tMH
/CAL
tMSU
tMH
/F, W/R,
/WE, /S
Don’t Care or Indeterminate
NOTES: 1. EDRAM self refreshes as long as /RE remains low. (Low Power Self Refresh part only).
2. When using the Low Power Self Refresh mode the following operations must be performed:
If row addresses are being refreshed in an evenly distributed manner over the refresh interval using /F refresh cycles, then at least
one /F refresh cycle must be performed immediately after exit from the Low Power Self Refesh Mode. If row addresses are being
refreshed in any other manner (/F burst or /RE distributed or burst), then all rows must be refreshed immediately befor entry to
and immediately after exit from the Low Power Self Refresh.
Part Numbering System
DM2202J 1 - 12I
Temperature Range
o
No Designator = 0 to 70 C (Commercial)
o
I = -40 to +85 C (Industrial)
o
L = 0 to 70 C, Low Power Self-Refresh
Access Time from Cache in Nanoseconds
12ns
15ns
Power Supply Voltage
No Designator = +5 Volts
1 = +3.3 Volts
Packaging System
J = 300 Mil, Plastic SOJ
T = 300 Mil, Plastic TSOP-II
I/O Width
i.e., Power to Which 2 is Raised for I/O Width (x4)
Special Feature Field
0 = No Write-Per-Bit
1 = Write-Per-Bit
Capacity in Bits
i.e., Power to Which 2 is Raised for Total Capacity (4Mbit)
Dynamic Memory
1-36
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
