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DM1M32SJ6-12 参数 Datasheet PDF下载

DM1M32SJ6-12图片预览
型号: DM1M32SJ6-12
PDF下载: 下载PDF文件 查看货源
内容描述: [Cache DRAM Module, 1MX32, 30ns, MOS, SIMM-72]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 19 页 / 188 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
 浏览型号DM1M32SJ6-12的Datasheet PDF文件第6页浏览型号DM1M32SJ6-12的Datasheet PDF文件第7页浏览型号DM1M32SJ6-12的Datasheet PDF文件第8页浏览型号DM1M32SJ6-12的Datasheet PDF文件第9页浏览型号DM1M32SJ6-12的Datasheet PDF文件第11页浏览型号DM1M32SJ6-12的Datasheet PDF文件第12页浏览型号DM1M32SJ6-12的Datasheet PDF文件第13页浏览型号DM1M32SJ6-12的Datasheet PDF文件第14页  
Switching Characteristics (continued)  
CC  
V = 5V ± 5% (+5 Volt Option), Vcc = 3.3V ± 0.3V (+3.3 Volt Option), C = 50pf, T = 0 to 70°C (Commercial), -40 to 85°C (Industrial)  
L
A
-12  
-15  
Symbol  
Description  
Units  
Min  
Max  
64  
Min  
Max  
64  
t
t
t
t
t
t
t
Row Enable Active Time, Cache Hit (Row=LRR) Read Cycle  
Refresh Period  
8
10  
ns  
ms  
ns  
ns  
ns  
ns  
ns  
RE1  
REF  
Output Enable Don't Care From Row Enable (Write, Cache Miss), O/P Hi Z  
Row Enable High to Output Turn-On After Write Miss  
Row Precharge Time  
9
0
10  
0
RGX  
RQX1  
(2,6)  
12  
15  
(7)  
RP  
20  
8
25  
10  
100  
Row Precharge Time, Cache Hit (Row=LRR) Read Cycle  
Row Precharge Time, Self-Refresh Mode  
RP1  
RP2  
100  
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
0
12  
35  
12  
12  
0
0
15  
40  
15  
15  
0
Read Hold Time From Row Enable (Write Only)  
Last Write Address Latch to End of Write  
Row Enable to Column Address Latch Low For Second Write  
Last Write Enable to End of Write  
Column Address Cycle Time  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
RRH  
RSH  
RSW  
RWL  
SC  
Select Hold From Row Enable  
SHR  
(1)  
SQV  
Chip Select Access Time  
12  
12  
8
15  
15  
10  
(2,3)  
SQX  
0
0
0
0
Output Turn-On From Select Low  
Output Turn-Off From Chip Select  
Select Setup Time to Row Enable  
Transition Time (Rise and Fall)  
(4,5)  
SQZ  
SSR  
T
5
5
1
1
10  
10  
12  
5
15  
5
Write Enable Cycle Time  
WC  
WCH  
WHR  
WI  
Column Address Latch Low to Write Enable Inactive Time  
Write Enable Hold After /RE  
(7)  
0
0
5
5
Write Enable Inactive Time  
5
5
Write Enable Active Time  
WP  
(1)  
WQV  
12  
12  
12  
15  
15  
15  
Data Valid From Write Enable High  
Data Output Turn-On From Write Enable High  
Data Turn-Off From Write Enable Low  
Write Enable Setup Time to Row Enable  
Write to Read Recovery (Following Write Miss)  
(2,5)  
WQX  
0
0
5
0
0
5
(3,4)  
WQZ  
WRP  
WRR  
16  
18  
(1) V Timing Reference Point at 1.5V  
OUT  
(2) Parameter Defines Time When Output is Enabled (Sourcing or Sinking Current) and is Not Referenced to V or V  
OH  
OL  
(3) Minimum Specification is Referenced from V and Maximum Specification is Referenced from V on Input Control Signal  
IH  
IL  
(4) Parameter Defines Time When Output Achieves Open-Circuit Condition and is Not Referenced to V or V  
OH  
OL  
(5) Minimum Specification is Referenced from V and Maximum Specification is Referenced from V on Input Control Signal  
IL  
IH  
(6) Access Parameter Applies When /CAL Has Not Been Asserted Prior to t  
RAC2  
(7) For Back-to-Back /F Refreshes, t = 40ns. For Non-consecutive /F Refreshes, t = 25ns and 32ns Respectively  
RP  
RP  
(8) For Write-Per-Bit Devices, t  
is Limited By Data Input Setup Time, t  
WHR  
DS  
2-84