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Q U A L C O M M C D M A T E C H N O L O G I E S
HTTP://WWW.UMTSCHIPS.COM
E N A B L I N G T H E F U T U R E O F C O M M U N I C A T I O N S
4
MSM6250™ CHIPSET SOLUTION
RFL6200 Device Description
RFR6200 Device Description
Integrated into the RFL6200 device are low-
noise amplifiers (LNAs) for the UMTS
bands, with three gain settings that are
programmable through the serial bus
interface (SBI).
The RFR6200 device is the radioOne zero IF
downconverter. The device has a mixer which,
when combined with the RFL6200, provides full
RF-to-baseband downconversion for UMTS
bands. The LO generation for direct conversion is
integrated on-chip.
Operating modes — sleep, Receive (Rx), and Rx/Transmit (Tx)
— as well as LNA bias currents are all automatically adjusted
via software in order to minimize DC power consumption.
Depending on handset status, the LNA bias current adjusts
accordingly to meet RF performance requirements with
minimal power consumption.
Increase in standby time is achieved by selective circuit power down,
gain control and bias current. These features, along with all of the
radioOne chipset functions, are controlled by the MSM6250 chipset.
The device is designed to operate with 2.7 to 3.1 V power supplies
and is compatible with single-cell Li-Ion batteries.
The device is fabricated using SiGe BiCMOS process, which is
suited for high performance RF circuits. The RFL6200 is
packaged in a very small 16-pin bump chip carrier (16
BCCP).
The RFR6200 device is fabricated using SiGe BiCMOS process, which
provides high frequency, high precision analog circuits as well as low-
power CMOS functions. Package type is 40 BCCP.
RFL6200 Device Features
RFR6200 Device Features
• radioOne chipset eliminates receiver and transmitter IF, thereby
reducing component count, space and cost
• Integrated LNA with programmable gain steps
• UMTS 1900/2100 MHz-band LNA supports WCDMA operation
• Low power consumption
• Compatibility with QUALCOMM's radioOne Zero IF chipset, which
eliminates the entire IF and reduces component count and space
• UMTS 1900/2100 MHz band direct down conversion - RF to
baseband
• Only one single band external VCO is needed for all bands of
operation (UMTS 1900/2100 MHz)
• Small package: 16 BCCP (4 mm x 4 mm)
• Fabricated in SiGe BiCMOS process
• Power reduction feature control and extend handset standby time
• Low-power supply voltage (2.7 to 3.1 V), low-power dissipation
• Compatible with lower MSM voltage (1.8 to 3.0 Vdd)
• Available in small, thermally efficient package (40 BCCP)
QUALCOMM [ QUALCOMM INCORPORATED ]
