GENERAL PURPOSE 6-PIN
PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium
arsenide infrared emitter optically coupled to a silicon
planar photodarlington.
4N29 4N30
4N31 4N32 4N33
FEATURES
• High sensitivity to low input drive current
• Meets or exceeds all JEDEC Registered Specifications
• VDE 0884 approval available as a test option
-add option .300. (e.g., 4N29.300)
SCHEMATIC
ANODE
CATHODE
N/C
1
6
BASE
APPLICATIONS
2
3
5
4
COLLECTOR
EMITTER
• Low power logic circuits
• Telecommunications equipment
• Portable electronics
• Solid state relays
• Interfacing coupling systems of different potentials and impedances.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise specified.)
Parameter
Symbol
Value
Units
TOTAL DEVICE
TSTG
-55 to +150
°C
Storage Temperature
Operating Temperature
TOPR
TSOL
-55 to +100
260 for 10 sec
250
°C
°C
Lead Solder Temperature
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
mW
PD
IF
3.3
mW/°C
EMITTER
80
mA
Continuous Forward Current
Reverse Voltage
VR
3
V
A
Forward Current - Peak (300 µs, 2% Duty Cycle)
LED Power Dissipation @ TA = 25°C
Derate above 25°C
IF(pk)
3.0
150
2.0
mW
mW/°C
PD
DETECTOR
BVCEO
30
V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
BVCBO
BVECO
30
5
V
V
150
2.0
150
mW
mW/°C
mA
PD
IC
Continuous Collector Current
4/25/00
200038B
QT [ QT OPTOELECTRONICS ]
