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HYS64D16000GDL-6-C 参数 Datasheet PDF下载

HYS64D16000GDL-6-C图片预览
型号: HYS64D16000GDL-6-C
PDF下载: 下载PDF文件 查看货源
内容描述: 200针的小型双列直插式内存模块 [200-Pin Small Outline Dual-In-Line Memory Modules]
分类和应用:
文件页数/大小: 34 页 / 1787 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYS64D[32/16]0x0[G/H]DL–[5/6]–C  
Small-Outline DDR SDRAM Modules  
1.2  
Description  
The  
HYS64D32020[H/G]DL–5–C  
and  
the PC board. The DIMMs feature serial presence detect  
based on a serial E2PROM device using the 2-Pin I2C  
protocol. The first 128 bytes are programmed with  
configuration data and the second 128 bytes are available to  
the customer.  
HYS64D[32/16]0x0[H/G]DL–6–C are industry standard  
200-Pin Small Outline Dual-In-Line Memory Modules (SO-  
DIMMs) organized as 32M × 64. The memory array is  
designed with Double Data Rate Synchronous DRAMs (DDR  
SDRAM). A variety of decoupling capacitors are mounted on  
TABLE 2  
Ordering Information for Lead Containing Products  
Product Type  
Compliance Code  
Description  
SDRAM Technology  
PC3200 (CL=3.0)  
HYS64D32020GDL–5–C  
PC2700 (CL=2.5)  
PC3200S–3033–1–A1  
two ranks 256 MB SO-DIMM  
256 Mbit (×16)  
HYS64D16000GDL–6–C  
HYS64D32020GDL–6–C  
PC2700S–2533–0–C1  
PC2700S–2533–0–A1  
one rank 128 MB SO-DIMM  
two ranks 256 MB SO-DIMM  
256 Mbit (×16)  
256 Mbit (×16)  
TABLE 3  
Ordering Information for RoHS Compliant Products  
Product Type1)  
Compliance Code  
Description  
SDRAM Technology  
PC3200 (CL=3.0)  
HYS64D32020HDL–5–C  
PC2700 (CL=2.5)  
PC3200S–3033–1–A1  
two ranks 256 MB SO-DIMM  
256 Mbit (×16)  
HYS64D16000HDL–6–C  
HYS64D32020HDL–6–C  
PC2700S–2533–0–C1  
PC2700S–2533–0–A1  
one rank 128 MB SO-DIMM  
two ranks 256 MB SO-DIMM  
256 Mbit (×16)  
256 Mbit (×16)  
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined  
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,  
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.  
Notes  
1. Allproduct types end with a place code designating the silicon-die revision. Reference information available on request.  
Example: HYS64D32020GDL-6-C, indicating rev. C dies are used for SDRAM components.  
2. The Compliance Code is printed on the module labels describing the speed sort (for example “PC2700”), the latencies and  
SPD code definition (for example “2033–0” means CAS latency of 2.0 clocks, RCD1) latency of 3 clocks, Row Precharge  
latency of 3 clocks, and JEDEC SPD code definiton version 0), and the Raw Card used for this module.  
1) RCD: Row-Column-Delay  
Rev. 1.31, 2006-09  
4
03292006-VN6D-DETI