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HYI39S512800AE-7.5 参数 Datasheet PDF下载

HYI39S512800AE-7.5图片预览
型号: HYI39S512800AE-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: 512兆位同步DRAM [512-Mbit Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 21 页 / 1153 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[I/B]39S512[40/80/16]0A[E/T]  
512-Mbit Synchronous DRAM  
1.2  
Description  
The HY[I/B]39S512[40/80/16]0A[E/T] are four bank Synchronous DRAM’s organized as 4 banks × 32MBit ×4, 4  
banks × 16MBit ×8 and 4 banks × 8Mbit ×16 respectively. These synchronous devices achieve high speed data transfer  
rates for CAS latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to  
a system clock. The chip is fabricated with Qimonda advanced 0.14 µm 512-MBit DRAM process technology.  
The device is designed to comply with all industry standards set for synchronous DRAM products, both electrically and  
mechanically. All of the control, address, data input and output circuits are synchronized with the positive edge of an externally  
supplied clock.  
Operating the four memory banks in an interleave fashion allows random access operation to occur at a higher rate than is  
possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length, CAS latency and  
speed grade of the device.  
Auto Refresh (CBR) and Self Refresh operation are supported. These devices operate with a single 3.3 V ± 0.3 V power supply.  
All 512-Mbit components are available in P(G)-TSOPII-54 packages.  
TABLE 2  
Ordering Information for RoHS Compliant Products  
Product Type  
Speed Grade  
Description  
Package  
Note  
Standard Operating Temperature (0 °C - +70 °C)  
HYB39S512400AT-7.5  
HYB39S512800AT-7.5  
HYB39S512160AT-7.5  
HYB39S512400AE-7.5  
HYB39S512800AE-7.5  
HYB39S512160AE-7.5  
PC133-333-520  
133MHz 4B × 32M × 4 SDRAM  
133MHz 4B × 16M × 8 SDRAM  
133MHz 4B × 8M × 16 SDRAM  
133MHz 4B × 32M × 4 SDRAM  
133MHz 4B × 16M × 8 SDRAM  
133MHz 4B × 8M × 16 SDRAM  
P-TSOPII-54  
1)  
PG-TSOPII-54  
Industrial Operating Temperature (–40 °C - +85 °C)  
HYI39S512400AT-7.5  
HYI39S512800AT-7.5  
HYI39S512160AT-7.5  
HYI39S512400AE-7.5  
HYI39S512800AE-7.5  
HYI39S512160AE-7.5  
PC133-333-520  
133MHz 4B × 32M × 4 SDRAM  
133MHz 4B × 16M × 8 SDRAM  
133MHz 4B × 8M × 16 SDRAM  
133MHz 4B × 32M × 4 SDRAM  
133MHz 4B × 16M × 8 SDRAM  
133MHz 4B × 8M × 16 SDRAM  
P-TSOPII-54  
1)  
PG-TSOPII-54  
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined  
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,  
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.  
Rev. 1.52, 2007-06  
4
03292006-6Y91-0T2Z