Internet Data Sheet
HY[B/I]18TC256[80/16]0AF
256-Mbit Double-Data-Rate-Two SDRAM
1
Overview
This chapter gives an overview of the 256-Mbit Double-Data-Rate-Two SDRAM product family and describes its main
characteristics.
1.1
Features
The 256-Mbit Double-Data-Rate-Two SDRAM offers the following key features:
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1.8 V ± 0.1 V Power Supply
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Off-Chip-Driver impedance adjustment (OCD) and
On-Die-Termination (ODT) for better signal quality
Auto-Precharge operation for read and write bursts
Auto-Refresh, Self-Refresh and power saving Power-
Down modes
Average Refresh Period 7.8 μs at a TCASE lower
than 85 °C, 3.9 μs between 85 °C and 95 °C
Programmable self refresh rate via EMRS2 setting
Programmable partial array refresh via EMRS2 settings
DCC enabling via EMRS2 setting
Full and reduced Strength Data-Output Drivers
1KB page size
Packages: PG-TFBGA-84, PG-TFBGA-60
RoHS Compliant Products1)
All Speed grades faster than DDR2–400 comply with
DDR2–400 timing specifications when run at a clock rate
of 200 MHz.
1.8 V ± 0.1 V (SSTL_18) compatible I/O
DRAM organizations with 8,16 data in/outputs
Double Data Rate architecture: two data transfers per
clock cycle four internal banks for concurrent operation
Programmable CAS Latency: 3, 4, 5 and 6
Programmable Burst Length: 4 and 8
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Differential clock inputs (CK and CK)
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Bi-directional, differential data strobes (DQS and DQS) are
transmitted / received with data. Edge aligned with read
data and center-aligned with write data.
DLL aligns DQ and DQS transitions with clock
DQS can be disabled for single-ended data strobe
operation
Commands entered on each positive clock edge, data and
data mask are referenced to both edges of DQS
Data masks (DM) for write data
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Posted CAS by programmable additive latency for better
command and data bus efficiency
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Rev. 1.3, 2007-11
3
03062006-H3V1-XJT4
Date: 2007-11-23