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HYI18T512160B2F-25F 参数 Datasheet PDF下载

HYI18T512160B2F-25F图片预览
型号: HYI18T512160B2F-25F
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 69 页 / 3834 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]18T512[40/80/16]0B2[C/F](L)  
512-Mbit Double-Data-Rate-Two SDRAM  
6
Currents Measurement Conditions  
This chapter describes the Current Measurement, Specifications and Conditions.  
TABLE 38  
DD Measurement Conditions  
I
Parameter  
Symbol Note  
1)2)3)4)5)  
Operating Current - One bank Active - Precharge  
IDD0  
6)  
t
CK = tCK(IDD), tRC = tRC(IDD), tRAS = tRAS.MIN(IDD), CKE is HIGH, CS is HIGH between valid commands. Address  
and control inputs are switching; Databus inputs are switching.  
1)2)3)4)5)  
Operating Current - One bank Active - Read - Precharge  
IDD1  
6)  
I
OUT = 0 mA, BL = 4, tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRAS.MIN(IDD), tRCD = tRCD(IDD), AL = 0, CL = CL(IDD);  
CKE is HIGH, CS is HIGH between valid commands. Address and control inputs are switching; Databus  
inputs are switching.  
1)2)3)4)5)  
6)  
Precharge Power-Down Current  
All banks idle; CKE is LOW; tCK = tCK(IDD); Other control and address inputs are stable; Data bus inputs are  
IDD2P  
floating.  
1)2)3)4)5)  
6)  
Precharge Standby Current  
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK(IDD); Other control and address inputs are switching,  
Data bus inputs are switching.  
IDD2N  
1)2)3)4)5)  
6)  
Precharge Quiet Standby Current  
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK(IDD); Other control and address inputs are stable, Data  
bus inputs are floating.  
IDD2Q  
IDD3P(0)  
IDD3P(1)  
IDD3N  
1)2)3)4)5)  
6)  
Active Power-Down Current  
All banks open; tCK = tCK(IDD), CKE is LOW; Other control and address inputs are stable; Data bus inputs  
are floating. MRS A12 bit is set to “0” (Fast Power-down Exit).  
1)2)3)4)5)  
6)  
Active Power-Down Current  
All banks open; tCK = tCK(IDD), CKE is LOW; Other control and address inputs are stable, Data bus inputs  
are floating. MRS A12 bit is set to 1 (Slow Power-down Exit);  
1)2)3)4)5)  
6)  
Active Standby Current  
All banks open; tCK = tCK(IDD); tRAS = tRAS.MAX(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid  
commands. Address inputs are switching; Data Bus inputs are switching;  
1)2)3)4)5)  
6)  
Operating Current  
IDD4R  
Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CL(IDD); tCK = tCK(IDD); tRAS  
RAS.MAX.(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands. Address inputs are  
=
t
switching; Data Bus inputs are switching; IOUT = 0 mA.  
1)2)3)4)5)  
6)  
Operating Current  
IDD4W  
Burst Write: All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CL(IDD); tCK = tCK(IDD); tRAS  
=
t
RAS.MAX(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands. Address inputs are  
switching; Data Bus inputs are switching;  
1)2)3)4)5)  
6)  
Burst Refresh Current  
IDD5B  
t
CK = tCK(IDD), Refresh command every tRFC = tRFC(IDD) interval, CKE is HIGH, CS is HIGH between valid  
commands, Other control and address inputs are switching, Data bus inputs are switching.  
1)2)3)4)5)  
6)  
Distributed Refresh Current  
IDD5D  
t
CK = tCK(IDD), Refresh command every tREFI = 7.8 µs interval, CKE is LOW and CS is HIGH between valid  
commands, Other control and address inputs are switching, Data bus inputs are switching.  
Rev. 1.12, 2007-05  
38  
10062006-YPTZ-CDR7  
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