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HYI18T1G800BF-3 参数 Datasheet PDF下载

HYI18T1G800BF-3图片预览
型号: HYI18T1G800BF-3
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位双数据速率- SDRAM双 [1-Gbit Double-Data-Rate-Two SDRAM]
分类和应用: 动态存储器
文件页数/大小: 74 页 / 4044 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]18T1G[40/80/16]0B[C/F](L/V)  
1-Gbit Double-Data-Rate-Two SDRAM  
Field  
Bits  
Type1)  
Description  
CL  
[6:4]  
w
CAS Latency  
Note: All other bit combinations are illegal.  
011B CL 3  
100B CL 4  
101B CL 5  
110B CL 6  
111B CL 7  
BT  
BL  
3
w
w
Burst Type  
0B  
1B  
BT Sequential  
BT Interleaved  
[2:0]  
Burst Length  
Note: All other bit combinations are illegal.  
010B BL 4  
011B BL 8  
1) w = write only register bits  
2) Number of clock cycles for write recovery during auto-precharge. WR in clock cycles is calculated by dividing tWR (in ns) by tCK (in ns) and  
rounding up to the next integer: WR [cycles] tWR (ns) / tCK (ns). The mode register must be programmed to fulfill the minimum requirement  
for the analogue tWR timing WRMIN is determined by tCK.MAX and WRMAX is determined by tCK.MIN  
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TABLE 20  
Extended Mode Register Definition (BA[2:0] = 001B)  
Field  
Bits  
Type1)  
Description  
Bank Address [2]  
Note: BA2 not available on 256 Mbit and 512 Mbit components  
0B BA2 Bank Address  
Bank Address [1]  
BA2  
16  
reg. addr.  
BA1  
BA0  
A13  
15  
14  
13  
0B  
BA1 Bank Address  
Bank Address [0]  
1B  
BA0 Bank Address  
w
w
Address Bus [13]  
Note: A13 is not available for 256 Mbit and x16 512 Mbit configuration  
0B  
A13 Address bit 13  
Qoff  
12  
Output Disable  
0B  
1B  
QOff Output buffers enabled  
QOff Output buffers disabled  
Rev. 1.3, 2007-07  
24  
03062006-ZNH8-HURV  
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