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HYE18L256160BFX-7.5 参数 Datasheet PDF下载

HYE18L256160BFX-7.5图片预览
型号: HYE18L256160BFX-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM的移动应用256兆移动-RAM [DRAMs for Mobile Applications 256-Mbit Mobile-RAM]
分类和应用: 动态存储器
文件页数/大小: 48 页 / 1590 K
品牌: QIMONDA [ QIMONDA AG ]
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HY[B/E]18L256160B[C/F]X-7.5  
256-Mbit Mobile-RAM  
Electrical Characteristics  
3.2  
AC Characteristics  
Table 20  
AC Characteristics1)2)3)4)  
Parameter  
Symbol  
tCK  
- 7.5  
Unit Notes  
min.  
7.5  
9.5  
max.  
Clock cycle time  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
ns  
ns  
Clock frequency  
fCK  
133  
105  
5.4  
6.0  
MHz  
MHz  
ns  
5)6)  
Access time from CLK  
tAC  
ns  
Clock high-level width  
tCH  
tCL  
tIS  
2.5  
2.5  
1.5  
0.5  
0.8  
2
ns  
Clock low-level width  
ns  
7)  
Address, data and command input setup time  
Address and command input hold time  
Data (DQ) input hold time  
ns  
7)  
tIH  
ns  
MODE REGISTER SET command period  
DQ low-impedance time from CLK  
DQ high-impedance time from CLK  
Data out hold time  
tMRD  
tLZ  
tCK  
ns  
ns  
ns  
tCK  
tCK  
ns  
ns  
ns  
ns  
ns  
ns  
ms  
tCK  
1.0  
3.0  
2.5  
tHZ  
7.0  
5)6)  
tOH  
DQM to DQ High-Z delay (READ Commands)  
DQM write mask latency  
tDQZ  
tDQW  
tRC  
2
0
8)  
ACTIVE to ACTIVE command period  
ACTIVE to READ or WRITE delay  
ACTIVE bank A to ACTIVE bank B delay  
ACTIVE to PRECHARGE command period  
WRITE recovery time  
67  
19  
15  
45  
14  
19  
8)  
8)  
8)  
9)  
8)  
tRCD  
tRRD  
tRAS  
tWR  
100k  
PRECHARGE command period  
Refresh period (8192 rows)  
tRP  
tREF  
tSREX  
64  
Self refresh exit time  
1
1) 0 °C TC 70 °C (comm.), -25 °C TC 85 °C (ext.); VDD = VDDQ = 1.70V to 1.95V;  
2) All parameters assumes proper device initialization.  
3) AC timing tests measured at 0.9 V.  
4) The transition time tT is measured between VIH and VIL; all AC characteristics assume tT = 1 ns.  
5) Specified tAC and tOH parameters are measured with a 30 pF capacitive load only as shown below:  
I/O  
30 pF  
6) If tT(CLK) > 1 ns, a value of (tT/2 - 0.5) ns has to be added to this parameter.  
7) If tT > 1 ns, a value of [0.5 x (tT - 1)] ns has to be added to this parameter.  
8) These parameter account for the number of clock cycles and depend on the operating frequency, as follows:  
no. of clock cycles = specified delay / clock period; round up to next integer.  
9) The write recovery time of tWR = 14 ns allows the use of one clock cycle for the write recovery time when fCK 72 MHz.  
With fCK > 72 MHz two clock cycles for tWR are mandatory. Qimonda recommends to use two clock cycles for the write  
recovery time in all applications.  
Data Sheet  
42  
Rev. 1.11, 2007-01  
07142005-CR47-RB2E  
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