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HYE18L128160BC-7.5 参数 Datasheet PDF下载

HYE18L128160BC-7.5图片预览
型号: HYE18L128160BC-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM的移动应用128兆移动-RAM [DRAMs for Mobile Applications 128-Mbit Mobile-RAM]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 55 页 / 1522 K
品牌: QIMONDA [ QIMONDA AG ]
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HY[B/E]18L128160B[C/F]-7.5  
128-Mbit Mobile-RAM  
Functional DescriptionCommands  
Table 10  
Timing Parameters for ACTIVE Command  
Symbol  
Parameter  
- 7.5  
Units  
ns  
Notes  
min.  
max.  
1)  
ACTIVE to ACTIVE command period  
ACTIVE to READ or WRITE delay  
ACTIVE bank A to ACTIVE bank B delay  
tRC  
tRCD  
tRRD  
67  
19  
15  
ns  
ns  
1) These parameters account for the number of clock cycles and depend on the operating frequency as follows:  
no. of clock cycles = specified delay / clock period; round up to next integer.  
2.4.5  
READ  
#,+  
#+%  
#3  
ꢇ(IGHꢈ  
2!3  
#!3  
7%  
!ꢄꢀ!ꢋ  
#!  
%NABLE !0  
!0  
$ISABLE !0  
"! ꢃ "ANK !DDRESS  
#! ꢃ #OLUMN !DDRESS  
!0 ꢃ !UTO 0RECHARGE  
!ꢅꢄ  
ꢃ $ONgT #ARE  
"!ꢄꢉ"!ꢅ  
"!  
Figure 11 READ Command  
Subsequent to programming the mode register with CAS latency and burst length, READ bursts are initiated with  
a READ command, as shown in Figure 11. Basic timings for the DQs are shown in Figure 12; they apply to all  
read operations and therefore are omitted from all subsequent timing diagrams.  
The starting column and bank addresses are provided with the READ command and Auto Precharge is either  
enabled or disabled for that burst access. If Auto Precharge is enabled, the row being accessed starts precharge  
at the completion of the burst, provided tRAS has been satisfied. For the generic READ commands used in the  
following illustrations, Auto Precharge is disabled.  
Data Sheet  
18  
Rev. 1.71, 2007-01  
05282004-NZNK-8T0D  
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