Internet Data Sheet
HY[I/B]39S512[40/80/16]0A[E/T]
512-Mbit Synchronous DRAM
TABLE 10
IDD Conditions
Parameter
Symbol
Operating Current
One bank active, Burst length = 1
Power down mode
IDD1
Precharge Standby Current
IDD2P
IDD2N
IDD3N
IDD3P
IDD4
Non-power down mode
No Operating Current
Active state (max. 4 banks)
Burst Operating Current
Auto Refresh Current
Self Refresh Current
Read command cycling
Auto Refresh command cycling
Self Refresh Mode, CKE=0.2 V, tCK=infinity
IDD5
IDD6
TABLE 11
DD Specifications and Conditions
I
Symbol
Test Condition
–7.5
Typ.
Unit
Note 1)
Max.
2)3)
2)
IDD1
t
RC = tRC(min), IO = 0 mA
123
0.6
23
145
3
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD2P
IDD2N
IDD3N
IDD3P
IDD4
CS =VIH (min.), CKE ≤VIL(max)
CS =VIH (min.), CKE≥ VIH(min)
CS = VIH(min), CKE ≥VIH(min.)
CS = VIH(min), CKE ≤ VIL(max.)
2)
31
35
4
2)
26
2)
2
2)3)
4)
97
123
300
—
4
IDD5
t
t
RFC= tRFC(min)
RFC= 15.6 µs
255
—
—
—
IDD6
2.1
1) TA = 0 to 70 °C for HYB.., TA = -40 to 85 °C for i-temp part (HYI..); VSS = 0 V, VDD, VDDQ = +3.3 V ± 0.3 V
2) These parameters depend on the cycle rate. All values are measured at 133 MHz for “-7.5” components with the outputs open. Input
signals are changed once during tck
.
3) These parameters are measured with continuous data stream during read access and all DQ toggling. CL=3 and BL=4 is assumed and
the VDDQ current is excluded.
4)
tRFC= tRFC(min) “burst refresh”, tRFC= 15.6 µs “distributed refresh”.
Rev. 1.52, 2007-06
14
03292006-6Y91-0T2Z