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HYB39S256800FFL-7 参数 Datasheet PDF下载

HYB39S256800FFL-7图片预览
型号: HYB39S256800FFL-7
PDF下载: 下载PDF文件 查看货源
内容描述: 256兆位同步DRAM [256-MBit Synchronous DRAM]
分类和应用: 存储内存集成电路动态存储器
文件页数/大小: 27 页 / 1612 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L)  
256-MBit Synchronous DRAM  
Parameter  
Symbol  
Self Refresh Current (standard components)  
IDD6  
Self Refresh Mode, CKE=0.2V, tCK=infinity  
Self Refresh Current (low power components)  
Self Refresh Mode, CKE=0.2V, tCK=infinity  
TABLE 12  
DD Specifications and Conditions  
I
Symbol  
–6  
–7  
Unit Note/ Test Condition1)2)  
Max.  
100 80  
3)4)  
IDD1  
t
RC = tRC(min), IO = 0 mA  
mA  
2)  
IDD2P  
IDD2N  
IDD3N  
IDD3P  
IDD4  
CS =VIH (min.), CKE VIL(max)  
CS =VIH (min.), CKEVIH(min)  
CS = VIH(min), CKE VIH(min.)  
CS = VIH(min), CKE VIL(max.)  
2
2
mA  
2)  
26  
40  
5
22  
35  
5
mA  
2)  
mA  
2)  
mA  
2)3)  
65  
57  
mA  
5)  
IDD5  
t
t
RFC = tRFC(min)  
RFC= 7.8 μs  
168 142 mA  
25  
3
25  
3
mA  
IDD6  
mA Standard components  
1.05 1.05 mA Low power components 6)  
1) Currents values will be added when available.  
2) TA = 0 to 70 °C; VSS = 0 V; VDD, VDDQ = 3.3 V ± 0.3 V  
3) These parameters depend on the cycle rate. All values are measured at 166 MHz for -6, at 133 MHz for -7 and -7.5 and at 100 MHz for -  
8 components with the outputs open. Input signals are changed once during tCK  
.
4) These parameters are measured with continuous data stream during read access and all DQ toggling. CL=3 and BL=4 is assumed and  
the VDDQ current is excluded.  
5)  
tRFC = tRFC(min) “burst refresh”, tRFC =7.8 μs “distributed refresh“  
6) 1.05 mA at 85 °C, 1.00 mA at 60 °C  
Rev. 1.42, 2007-09  
18  
03292006-TMTK-JFEU  
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