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HYB25D512400BT-7 参数 Datasheet PDF下载

HYB25D512400BT-7图片预览
型号: HYB25D512400BT-7
PDF下载: 下载PDF文件 查看货源
内容描述: 512 - Mbit的双数据速率SDRAM [512-Mbit Double-Data-Rate SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 38 页 / 2063 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB25D512[40/16/80]0B[E/F/C/T](L)  
Double-Data-Rate SDRAM  
9) Concurrent Auto Precharge:  
This device supports “Concurrent Auto Precharge”. When a read with auto precharge or a write with auto precharge is enabled any  
command may follow to the other banks as long as that command does not interrupt the read or write data transfer and all other limitations  
apply (e.g. contention between READ data and WRITE data must be avoided). The minimum delay from a read or write command with  
auto precharge enable, to a command to a different banks is summarized in Table 15.  
10) A Write command may be applied after the completion of data output.  
TABLE 15  
Truth Table 5: Concurrent Auto Precharge  
From Command  
To Command (different bank)  
Minimum Delay with Concurrent Auto Unit  
Precharge Support  
1)  
WRITE w/AP  
Read or Read w/AP  
Write to Write w/AP  
Precharge or Activate  
Read or Read w/AP  
Write or Write w/AP  
Precharge or Activate  
1 + (BL/2) + RU(tWTR/tCK  
)
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
BL/2  
1
Read w/AP  
BL/2  
RU(CL)1) + BL/2  
1
1) RU means rounded to the next integer  
Rev. 1.63, 2006-09  
22  
03062006-PFFJ-YJY2  
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