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HYB25DC512160CF-6 参数 Datasheet PDF下载

HYB25DC512160CF-6图片预览
型号: HYB25DC512160CF-6
PDF下载: 下载PDF文件 查看货源
内容描述: 512 - Mbit的双数据速率SDRAM [512-Mbit Double-Data-Rate SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 35 页 / 1891 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB25DC512[800/160]C[E/F]  
512-Mbit Double-Data-Rate SDRAM  
Parameter  
Symbol  
Values  
Typ.  
Unit  
Note/  
Test Condition  
Min.  
Max.  
Input/Output Capacitance: DQ, DQS, DM  
CIO  
3.5  
4.0  
4.5  
5.0  
0.5  
pF  
pF  
pF  
TFBGA 1)2)  
TSOPII 1)2)  
1)  
Delta Input/Output Capacitance: DQ, DQS,  
DM  
CdIO  
1) These values are guaranteed by design and are tested on a sample base only. VDDQ = VDD = 2.5 V ± 0.2 V, f = 100 MHz, TA = 25 °C,  
OUT(DC) = VDDQ/2, VOUT (Peak to Peak) 0.2 V. Unused pins are tied to ground.  
V
2) DM inputs are grouped with I/O pins reflecting the fact that they are matched in loading to DQ and DQS to facilitate trace matching at the  
board level.  
TABLE 17  
Electrical Characteristics and DC Operating Conditions  
Parameter  
Symbol  
Values  
Unit Note1)/Test Condition  
Min.  
Typ.  
Max.  
Device Supply Voltage  
Device Supply Voltage  
Output Supply Voltage  
Output Supply Voltage  
VDD  
2.3  
2.5  
2.3  
2.5  
0
2.5  
2.6  
2.5  
2.6  
2.7  
2.7  
2.7  
2.7  
0
V
V
V
V
V
fCK 166 MHz  
f
CK > 166 MHz 2)  
fCK 166 MHz 3)  
VDD  
VDDQ  
VDDQ  
fCK > 166 MHz 2)3)  
Supply Voltage, I/O Supply VSS, VSSQ  
Voltage  
4)  
5)  
Input Reference Voltage  
VREF  
VTT  
0.49 × VDDQ 0.5 × VDDQ 0.51 × VDDQ  
V
V
I/O Termination Voltage  
(System)  
VREF – 0.04  
VREF + 0.04  
6)  
6)  
6)  
Input High (Logic1) Voltage VIH(DC)  
Input Low (Logic0) Voltage VIL(DC)  
VREF + 0.15  
0.3  
VDDQ + 0.3  
VREF – 0.15  
VDDQ + 0.3  
V
V
V
Input Voltage Level, CK and VIN(DC)  
0.3  
CK Inputs  
6)7)  
8)  
Input Differential Voltage,  
CK and CK Inputs  
VID(DC)  
0.36  
0.71  
–2  
VDDQ + 0.6  
V
VI-Matching Pull-up Current VIRatio  
to Pull-down Current  
1.4  
2
µA  
µA  
Input Leakage Current  
Output Leakage Current  
II  
Any input 0 V VIN VDD; All  
other pins not under test = 0 V9)  
IOZ  
–5  
5
DQs are disabled; 0 V VOUT  
VDDQ  
9)  
Output High Current, Normal IOH  
Strength Driver  
–16.2  
mA VOUT  
=
1.95 V  
Output Low Current, Normal IOL  
16.2  
mA VOUT = 0.35 V  
Strength Driver  
1) 0 °C TA 70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V;  
2) DDR400 conditions apply for all clock frequencies above 166 MHz  
3) Under all conditions, VDDQ must be less than or equal to VDD  
4) Peak to peak AC noise on VREF may not exceed ± 2% VREF.DC. VREF is also expected to track noise variations in VDDQ  
.
.
Rev. 1.3, 2006-12  
21  
03292006-W2FE-ELDX  
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