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HYB25DC128800CF-6 参数 Datasheet PDF下载

HYB25DC128800CF-6图片预览
型号: HYB25DC128800CF-6
PDF下载: 下载PDF文件 查看货源
内容描述: 128 - Mbit的双数据速率SDRAM [128-Mbit Double-Data-Rate SDRAM]
分类和应用: 内存集成电路动态存储器双倍数据速率
文件页数/大小: 32 页 / 1836 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB25DC128[800/160]C[E/F]  
128-Mbit Double-Data-Rate SDRAM  
1
Overview  
This chapter lists all main features of the product family HYB25DC128[800/160]C[E/F] and the ordering information.  
1.1  
Features  
Double data rate architecture: two data transfers per clock cycle  
Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver  
DQS is edge-aligned with data for reads and is center-aligned with data for writes  
Differential clock inputs  
Four internal banks for concurrent operation  
Data mask (DM) for write data  
DLL aligns DQ and DQS transitions with CK transitions  
Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS  
Burst Lengths: 2, 4, or 8  
CAS Latency: 2, 2.5, 3  
Auto Precharge option for each burst access  
Auto Refresh and Self Refresh Modes  
RAS-lockout supported tRAP = tRCD  
15.6 µs Maximum Average Periodic Refresh Interval  
2.5 V (SSTL_2 compatible) I/O  
V
V
DDQ = 2.5 V ± 0.2 V  
DD = 2.5 V ± 0.2 V  
PG-TFBGA-60 package with 3 depopulated rows (8 × 12 mm2)  
PG-TSOPII-66 package  
Lead- and halogene-free = green product  
TABLE 1  
Performance  
Part Number Speed Code  
–5  
–6  
Unit  
Speed Grade  
Component  
@CL3  
DDR400B  
200  
DDR333  
166  
Max. Clock Frequency  
fCK3  
MHz  
MHz  
MHz  
@CL2.5  
@CL2  
fCK2.5  
fCK2  
166  
166  
133  
133  
The 128-Mbit Double-Data-Rate SDRAM is  
a
high-speed CMOS, dynamic random-access memory containing  
134,217,728 bits. It is internally configured as a quad-bank DRAM.  
The 128-Mbit Double-Data-Rate SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double  
data rate architecture is essentially a 2n prefetch architecture with an interface designed to transfer two data words per clock  
cycle at the I/O pins. A single read or write access for the 128-Mbit Double-Data-Rate SDRAM effectively consists of a single  
2n-bit wide, one clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle  
data transfers at the I/O pins.  
Rev. 1.1, 2007-01  
3
03062006-JXUK-E7R1