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HYB25D512800BC-6 参数 Datasheet PDF下载

HYB25D512800BC-6图片预览
型号: HYB25D512800BC-6
PDF下载: 下载PDF文件 查看货源
内容描述: 512 - Mbit的双数据速率SDRAM [512-Mbit Double-Data-Rate SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 38 页 / 2063 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB25D512[40/16/80]0B[E/F/C/T](L)  
Double-Data-Rate SDRAM  
4
Electrical Characteristics  
4.1  
Operating Conditions  
TABLE 16  
Absolute Maximum Ratings  
Parameter  
Symbol  
Values  
typ.  
Unit Note/ Test  
Condition  
max.  
min.  
Voltage on I/O pins relative to VSS  
VIN, VOUT  
–0.5  
VDDQ  
+
V
0.5  
Voltage on inputs relative to VSS  
Voltage on VDD supply relative to VSS  
Voltage on VDDQ supply relative to VSS  
Operating temperature (ambient)  
Storage temperature (plastic)  
VIN  
–1  
–1  
–1  
0
+3.6  
+3.6  
+3.6  
+70  
+150  
V
VDD  
VDDQ  
TA  
V
V
°C  
°C  
W
mA  
TSTG  
PD  
-55  
Power dissipation (per SDRAM component)  
Short circuit output current  
1
IOUT  
50  
Attention: Permanent damage to the device may occur if “Absolute Maximum Ratings” are exceeded. This is a stress  
rating only, and functional operation should be restricted to recommended operation conditions. Exposure  
to absolute maximum rating conditions for extended periods of time may affect device reliability and  
exceeding only one of the values may cause irreversible damage to the integrated circuit.  
Rev. 1.63, 2006-09  
23  
03062006-PFFJ-YJY2  
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