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HYB25D128160CT-6 参数 Datasheet PDF下载

HYB25D128160CT-6图片预览
型号: HYB25D128160CT-6
PDF下载: 下载PDF文件 查看货源
内容描述: 128 - Mbit的双数据速率SDRAM [128-Mbit Double-Data-Rate SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 35 页 / 1979 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB25D128xxxC[C/E/F/T](L)  
128-Mbit Double-Data-Rate SDRAM  
4
Electrical Characteristics  
This chapter lists the electrical characteristics.  
4.1  
Operating Conditions  
This chapter contains the operating conditions tables.  
TABLE 16  
Absolute Maximum Ratings  
Parameter  
Symbol  
Values  
Unit Note/ Test  
Condition  
Min.  
Typ.  
Max.  
Voltage on I/O pins relative to VSS  
VIN, VOUT  
–0.5  
VDDQ  
+
V
0.5  
Voltage on inputs relative to VSS  
Voltage on VDD supply relative to VSS  
Voltage on VDDQ supply relative to VSS  
Operating temperature (ambient)  
Storage temperature (plastic)  
VIN  
–1  
–1  
–1  
0
1.5  
50  
+3.6  
+3.6  
+3.6  
+70  
+150  
V
VDD  
VDDQ  
TA  
V
V
°C  
°C  
W
mA  
TSTG  
PD  
-55  
Power dissipation (per SDRAM component)  
Short circuit output current  
IOUT  
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to  
absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings  
are absolute ratings; exceeding only one of these values maycause irreversible damage to the integrated  
circuit.  
Rev. 1.6, 2007-02  
20  
03292006-U5AN-6TI1  
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