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HYB25D128160CT-5 参数 Datasheet PDF下载

HYB25D128160CT-5图片预览
型号: HYB25D128160CT-5
PDF下载: 下载PDF文件 查看货源
内容描述: 128 - Mbit的双数据速率SDRAM [128-Mbit Double-Data-Rate SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 35 页 / 1979 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB25D128xxxC[C/E/F/T](L)  
128-Mbit Double-Data-Rate SDRAM  
11) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge. A valid transition  
is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were previously in progress on the  
bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from  
HIGH to LOW at this time, depending on tDQSS  
.
12) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system  
performance (bus turnaround) degrades accordingly.  
TABLE 23  
AC Timing - Absolute Specifications  
Parameter  
Symbol –7  
DDR266A  
Min.  
Unit Note1)/ Test  
Condition  
Max.  
2)3)4)5)  
DQ output access time from CK/CK  
CK high-level width  
tAC  
tCH  
tCK  
–0.75  
+0.75  
0.55  
12  
ns  
tCK  
ns  
ns  
ns  
tCK  
tCK  
ns  
ns  
ns  
tCK  
ns  
ns  
tCK  
ns  
tCK  
tCK  
ns  
ns  
ns  
0.45  
Clock cycle time  
7.5  
CL = 3.0  
CL = 2.5  
CL = 2.0  
7.5  
12  
7.5  
12  
CK low-level width  
tCL  
0.45  
0.55  
6)  
Auto precharge write recovery + precharge time  
DQ and DM input hold time  
tDAL  
tDH  
(tWR/tCK)+(tRP/tCK)  
0.5  
DQ and DM input pulse width (each input)  
DQS output access time from CK/CK  
DQS input low (high) pulse width (write cycle)  
DQS-DQ skew (DQS and associated DQ signals)  
DQS-DQ skew (DQS and associated DQ signals)  
Write command to 1st DQS latching transition  
DQ and DM input setup time  
tDIPW  
tDQSCK  
tDQSL,H  
tDQSQ  
tDQSQ  
tDQSS  
tDS  
1.75  
–0.75  
0.35  
+0.75  
+0.5  
+0.5  
1.25  
TFBGA  
TSOPII  
0.75  
0.5  
DQS falling edge hold time from CK (write cycle)  
DQS falling edge to CK setup time (write cycle)  
Clock Half Period  
tDSH  
tDSS  
tHP  
0.2  
0.2  
min. (tCL, tCH  
)
7)  
Data-out high-impedance time from CK/CK  
Address and control input hold time  
tHZ  
+0.75  
tIH  
0.9  
fast slew rate  
8)  
1.0  
1.1  
ns  
slow slew rate  
9)  
Control and Addr. input pulse width (each input)  
Address and control input setup time  
tIPW  
tIS  
2.2  
0.9  
ns  
ns  
fast slew rate  
1.0  
ns  
slow slew rate  
Data-out low-impedance time from CK/CK  
Mode register set command cycle time  
DQ/DQS output hold time  
tLZ  
–0.75  
2
+0.75  
ns  
tCK  
ns  
tMRD  
tQH  
t
HP tQHS  
Rev. 1.6, 2007-02  
28  
03292006-U5AN-6TI1  
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