Internet Data Sheet
HY[B/I]18T512[40/80/16]0B2[C/F](L)
512-Mbit Double-Data-Rate-Two SDRAM
1.2
Description
The 512-Mb DDR2 DRAM is a high-speed Double-Data-
Rate-Two CMOS DRAM device containing 536,870,912 bits
and internally configured as a quad-bank DRAM. The 512-Mb
device is organized as either 32 Mbit × 4 I/O ×4 banks,
16 Mbit ×8 I/O × 4 banks or 8 Mbit ×16 I/O ×4 banks chip.
These devices achieve high speed transfer rates starting at
400 Mb/sec/pin for general applications. See Table 1 for
performance figures.
Inputs are latched at the cross point of differential clocks (CK
rising and CK falling). All I/Os are synchronized with a single
ended DQS or differential DQS-DQS pair in a source
synchronous fashion.
A 16-bit address bus for ×4 and ×8 organized components
and a 15-bit address bus for ×16 components is used to
convey row, column and bank address information in a RAS-
CAS multiplexing style.
The device is designed to comply with all DDR2 DRAM key
features:
The DDR2 device operates with a 1.8 V ± 0.1 V power
supply. An Auto-Refresh and Self-Refresh mode is provided
along with various power-saving power-down modes.
1. Posted CAS with additive latency,
2. Write latency = read latency - 1,
The functionality described and the timing specifications
included in this data sheet are for the DLL Enabled mode of
operation.
3. Normal and weak strength data-output driver,
4. Off-Chip Driver (OCD) impedance adjustment
5. On-Die Termination (ODT) function.
The DDR2 SDRAM is available in PG-TFBGA package.
All of the control and address inputs are synchronized with a
pair of externally supplied differential clocks.
Rev. 1.12, 2007-05
5
10062006-YPTZ-CDR7
QIMONDA [ QIMONDA AG ]
