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HYB18T256161BF 参数 Datasheet PDF下载

HYB18T256161BF图片预览
型号: HYB18T256161BF
PDF下载: 下载PDF文件 查看货源
内容描述: 256 - Mbit的X16 DDR2 SDRAM [256-Mbit x16 DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 40 页 / 1358 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18T256161BF–20/25/28  
256-Mbit Double-Data-Rate-Two SDRAM  
TABLE 4  
Abbreviations for Buffer Type  
Abbreviation  
Description  
SSTL  
Serial Stub Terminated Logic (SSTL_18)  
Low Voltage CMOS  
LV-CMOS  
CMOS  
OD  
CMOS Levels  
Open Drain. The corresponding ball has 2 operational states, active low and tristate, and  
allows multiple devices to share as a wire-OR.  
FIGURE 1  
Chip Configuration, PG-TFBGA-84 (top view)  
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Notes  
2. LDM is the data mask signal for DQ[7:0], UDM is the data  
mask signal for DQ[15:8]  
3. VDDL and VSSDL are power and ground for the DLL. VDDL is  
1. UDQS/UDQS is data strobe for DQ[15:8], LDQS/LDQS is  
data strobe for DQ[7:0]  
connected to VDD on the device. VDD, VDDQ, VSSDL, VSS  
and VSSQ are isolated on the device.  
,
Rev. 1.20, 2007-06  
8
11232006-QP6X-6EM0