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HYB18TC512160BF-3S 参数 Datasheet PDF下载

HYB18TC512160BF-3S图片预览
型号: HYB18TC512160BF-3S
PDF下载: 下载PDF文件 查看货源
内容描述: 512兆位双数据速率 - 双SDRAM的 [512-Mbit Double-Data-Rate-Two SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 61 页 / 3372 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18TC512[16/80]0BF  
512-Mbit Double-Data-Rate-Two SDRAM  
1
Overview  
This chapter gives an overview of the 512-Mbit Double-Data-Rate-Two SDRAM product family and describes its main  
characteristics.  
1.1  
Features  
The 512-Mbit Double-Data-Rate-Two SDRAM offers the following key features:  
1.8 V ± 0.1 V Power Supply 1.8 V ± 0.1 V (SSTL_18)  
compatible I/O  
Off-Chip-Driver impedance adjustment (OCD) and On-  
Die-Termination (ODT) for better signal quality.  
Auto-Precharge operation for read and write bursts  
Auto-Refresh, Self-Refresh and power saving Power-  
Down modes  
Average Refresh Period 7.8 µs at a TCASE lower than 85  
°C, 3.9 µs between 85 °C and 95 °C  
Programmable self refresh rate via EMRS2 setting  
Programmable partial array refresh via EMRS2 settings  
DCC enabling via EMRS2 setting  
DRAM organizations with 4, 8 and 16 data in/outputs  
Double Data Rate architecture: two data transfers per  
clock cycle four internal banks for concurrent operation  
Programmable CAS Latency: 3, 4, 5 and 6  
Programmable Burst Length: 4 and 8  
Differential clock inputs (CK and CK)  
Bi-directional, differential data strobes (DQS and DQS) are  
transmitted / received with data. Edge aligned with read  
data and center-aligned with write data.  
DLL aligns DQ and DQS transitions with clock  
DQS can be disabled for single-ended data strobe  
operation  
Commands entered on each positive clock edge, data and  
data mask are referenced to both edges of DQS  
Data masks (DM) for write data  
Posted CAS by programmable additive latency for better  
command and data bus efficiency  
Full and reduced Strength Data-Output Drivers  
1kB page size for ×8, 2kB page size for ×16  
Packages: PG-TFBGA-84 for ×8 components PG-TFBGA-  
60 for ×16 components  
RoHS Compliant Products1)  
All Speed grades faster than DDR400 comply with  
DDR400 timing specifications when run at a clock rate of  
200 MHz.  
A list of the performance tables for the various speeds can be found below  
Table 1 “Performance tables for –2.5” on Page 4  
Table 2 “Performance table for –3(S)” on Page 4  
Table 3 “Performance table for –3.7” on Page 4  
Table 4 “Performance table for –5” on Page 5  
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined  
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,  
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.  
Rev. 1.11, 2006-09  
3
03292006-HDLH-OAY6