欢迎访问ic37.com |
会员登录 免费注册
发布采购

HYB18TC1G800BF 参数 Datasheet PDF下载

HYB18TC1G800BF图片预览
型号: HYB18TC1G800BF
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位双数据速率- SDRAM双 [1-Gbit Double-Data-Rate-Two SDRAM]
分类和应用: 动态存储器
文件页数/大小: 65 页 / 3555 K
品牌: QIMONDA [ QIMONDA AG ]
 浏览型号HYB18TC1G800BF的Datasheet PDF文件第30页浏览型号HYB18TC1G800BF的Datasheet PDF文件第31页浏览型号HYB18TC1G800BF的Datasheet PDF文件第32页浏览型号HYB18TC1G800BF的Datasheet PDF文件第33页浏览型号HYB18TC1G800BF的Datasheet PDF文件第35页浏览型号HYB18TC1G800BF的Datasheet PDF文件第36页浏览型号HYB18TC1G800BF的Datasheet PDF文件第37页浏览型号HYB18TC1G800BF的Datasheet PDF文件第38页  
Internet Data Sheet  
HYB18TC1G[80/16]0BF  
1-Gbit Double-Data-Rate-Two SDRAM  
6
Currents Measurement Conditions  
This chapter describes the Current Measurement, Specifications and Conditions.  
TABLE 41  
DD Measurement Conditions  
I
Parameter  
Symbol Note  
1)2)3)4)5)  
Operating Current - One bank Active - Precharge  
IDD0  
6)  
t
CK = tCK(IDD), tRC = tRC(IDD), tRAS = tRAS.MIN(IDD), CKE is HIGH, CS is HIGH between valid commands. Address  
and control inputs are switching; Databus inputs are switching.  
1)2)3)4)5)  
Operating Current - One bank Active - Read - Precharge  
IDD1  
6)  
I
OUT = 0 mA, BL = 4, tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRAS.MIN(IDD), tRCD = tRCD(IDD), AL = 0, CL = CL(IDD);  
CKE is HIGH, CS is HIGH between valid commands. Address and control inputs are switching; Databus  
inputs are switching.  
1)2)3)4)5)  
6)  
Precharge Power-Down Current  
All banks idle; CKE is LOW; tCK = tCK(IDD);Other control and address inputs are stable; Data bus inputs are  
IDD2P  
floating.  
1)2)3)4)5)  
6)  
Precharge Standby Current  
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK(IDD); Other control and address inputs are switching,  
Data bus inputs are switching.  
IDD2N  
1)2)3)4)5)  
6)  
Precharge Quiet Standby Current  
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK(IDD); Other control and address inputs are stable, Data  
bus inputs are floating.  
IDD2Q  
IDD3P(0)  
IDD3P(1)  
IDD3N  
1)2)3)4)5)  
6)  
Active Power-Down Current  
All banks open; tCK = tCK(IDD), CKE is LOW; Other control and address inputs are stable; Data bus inputs  
are floating. MRS A12 bit is set to “0” (Fast Power-down Exit).  
1)2)3)4)5)  
6)  
Active Power-Down Current  
All banks open; tCK = tCK(IDD), CKE is LOW; Other control and address inputs are stable, Data bus inputs  
are floating. MRS A12 bit is set to 1 (Slow Power-down Exit);  
1)2)3)4)5)  
6)  
Active Standby Current  
All banks open; tCK = tCK(IDD); tRAS = tRAS.MAX(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid  
commands. Address inputs are switching; Data Bus inputs are switching;  
1)2)3)4)5)  
6)  
Operating Current  
IDD4R  
Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CL(IDD); tCK = tCK(IDD)  
;
t
RAS = tRAS.MAX.(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands. Address inputs are  
switching; Data Bus inputs are switching; IOUT = 0 mA.  
1)2)3)4)5)  
6)  
Operating Current  
IDD4W  
Burst Write: All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CL(IDD); tCK = tCK(IDD)  
;
t
RAS = tRAS.MAX(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands. Address inputs are  
switching; Data Bus inputs are switching;  
1)2)3)4)5)  
6)  
Burst Refresh Current  
IDD5B  
t
CK = tCK(IDD), Refresh command every tRFC = tRFC(IDD) interval, CKE is HIGH, CS is HIGH between valid  
commands, Other control and address inputs are switching, Data bus inputs are switching.  
1)2)3)4)5)  
6)  
Distributed Refresh Current  
IDD5D  
t
CK = tCK(IDD), Refresh command every tREFI = 7.8 µs interval, CKE is LOW and CS is HIGH between valid  
commands, Other control and address inputs are switching, Data bus inputs are switching.  
Rev. 1.21, 2007-07  
34  
02282007-F8UP-4HSU  
 复制成功!