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HYB18T2G802AF 参数 Datasheet PDF下载

HYB18T2G802AF图片预览
型号: HYB18T2G802AF
PDF下载: 下载PDF文件 查看货源
内容描述: 240引脚注册DDR2 SDRAM模组 [240-Pin Registered DDR2 SDRAM Modules]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 41 页 / 2325 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYS72T[512/256]02xHR–[3S/3.7/5]–A  
Registered DDR2 SDRAM Modules  
1.2  
Description  
The  
QIMONDA  
HYS72T[512/256]02xHR–[3S/3.7/5]–A  
capacitive loading to the system bus, but adds one cycle to  
the SDRAM timing. Decoupling capacitors are mounted on  
the PCB board. The DIMMs feature serial presence detect  
based on a serial E2PROM device using the 2-pin I2C  
protocol. The first 128 bytes are programmed with  
configuration data and the second 128 bytes are available to  
the customer.  
module family are Registered DIMM modules “RDIMMs” with  
30 mm height based on DDR2 technology. DIMMs are  
available as ECC modules in 256M × 72 (2 GByte),  
512M × 72 (4 GByte) organization and density, intended for  
mounting into 240-Pin connector sockets.  
The memory array is designed with stacked 1-Gbit Double-  
Data-Rate-Two (DDR2) Synchronous DRAMs. All control and  
address signals are re-driven on the DIMM using register  
devices and a PLL for the clock distribution. This reduces  
TABLE 2  
Ordering Information for RoHS Compliant Products  
Product Type1)  
Compliance Code2)  
Description  
SDRAM Technology  
PC2–5300  
HYS72T512022HR–3S–A  
PC2–4200  
4 GB 2R×4 PC2–5300R–555–12–D0  
4 GB 2R×4 PC2–4200R–444–12–D0  
2 Ranks, ECC 1 Gbit (×4)  
2 Ranks, ECC 1 Gbit (×4)  
HYS72T512022HR–3.7–A  
PC2-3200  
HYS72T256023HR–5–A  
HYS72T512022HR–5–A  
2 GB 2R×8 PC2–3200R–333–12–ZZ  
4 GB 2R×4 PC2–3200R–333–12–D0  
2 Ranks, ECC 1 Gbit (×8)  
2 Ranks, ECC 1 Gbit (×4)  
1) All Product Type numbers end with a place code, designating the silicon die revision. Example: HYS72T512022HR–3.7–A, indicating Rev.  
“A” dies are used for DDR2 SDRAM components. For all QIMONDA DDR2 module and component nomenclature see Chapter 6 of this  
data sheet.  
2) The Compliance Code is printed on the module label and describes the speed grade, for example “PC2–4200R–444–12–D0”, where  
4200R means Registered DIMM modules with 4.26 GB/sec Module Bandwidth and “444-11” means Column Address Strobe (CAS) latency  
= 4, Row Column Delay (RCD) latency = 4 and Row Precharge (RP) latency = 4 using the latest JEDEC SPD Revision 1.2 and produced  
on the Raw Card “D”  
TABLE 3  
Address Format  
DIMM  
Density  
Module  
Organization  
Memory  
Ranks  
ECC/  
Non-ECC  
# of  
SDRAMs  
# of row/bank/columns bits  
Raw Card  
2 GB  
4 GB  
256M × 72  
512M × 72  
2
2
ECC  
ECC  
2 × 9  
14/3/10  
14/3/11  
Z
2 × 18  
D
TABLE 4  
Components on Modules  
DRAM Organization Note1)  
Product Type  
DRAM Components  
DRAM Density  
HYS72T256023HR  
HYS72T512022HR  
HYB18T2G802AF  
HYB18T2G402AF  
2 Gbit  
2 Gbit  
2 × 128M × 8  
2 × 256M × 4  
1) For a detailed description of all available functions of the DRAM components on these modules see the component data sheet.  
Rev. 1.2, 2007-01  
4
03292006-AYVF-ZIIJ  
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