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HYB18T1G800BC-2.5 参数 Datasheet PDF下载

HYB18T1G800BC-2.5图片预览
型号: HYB18T1G800BC-2.5
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位双数据速率- SDRAM双 [1-Gbit Double-Data-Rate-Two SDRAM]
分类和应用: 动态存储器
文件页数/大小: 74 页 / 4044 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]18T1G[40/80/16]0B[C/F](L/V)  
1-Gbit Double-Data-Rate-Two SDRAM  
Parameter  
Symbol  
DDR2–667  
Min.  
Unit  
Note1)2)3)4)5)6)7)  
Max.  
Control & address input pulse width for each input tIPW  
0.6  
tCK.AVG  
ps  
23)24)  
8)21)  
8)21)  
34)  
Address and control input setup time  
DQ low impedance time from CK/CK  
DQS/DQS low-impedance time from CK / CK  
MRS command to ODT update delay  
Mode register set command cycle time  
OCD drive mode output delay  
tIS.BASE  
200  
tLZ.DQ  
tLZ.DQS  
tMOD  
tMRD  
tOIT  
2 x tAC.MIN  
tAC.MAX  
tAC.MAX  
12  
ps  
tAC.MIN  
ps  
0
2
0
ns  
nCK  
ns  
34)  
12  
25)  
DQ/DQS output hold time from DQS  
DQ hold skew factor  
tQH  
t
HP tQHS  
ps  
26)  
tQHS  
tREFI  
340  
7.8  
3.9  
ps  
27)28)  
28)29)  
30)  
Average periodic refresh Interval  
µs  
µs  
Auto-Refresh to Active/Auto-Refresh command tRFC  
127.5  
ns  
period  
Precharge-All (8 banks) command period  
Read preamble  
tRP  
t
RP + 1 × tCK  
ns  
31)32)  
31)33)  
34)  
tRPRE  
tRPST  
tRRD  
0.9  
0.4  
7.5  
1.1  
0.6  
tCK.AVG  
tCK.AVG  
ns  
Read postamble  
Active to active command period for 1KB page  
size products  
34)  
34)  
Active to active command period for 2KB page  
size products  
tRRD  
10  
ns  
Internal Read to Precharge command delay  
Write preamble  
tRTP  
7.5  
0.35  
0.4  
15  
0.6  
ns  
tWPRE  
tWPST  
tWR  
tCK.AVG  
tCK.AVG  
ns  
Write postamble  
34)  
Write recovery time  
34)35)  
Internal write to read command delay  
Exit power down to read command  
tWTR  
tXARD  
7.5  
2
ns  
nCK  
nCK  
Exit active power-down mode to read command tXARDS  
7 – AL  
(slow exit, lower power)  
Exit precharge power-down to any valid  
command (other than NOP or Deselect)  
tXP  
2
nCK  
34)  
Exit self-refresh to a non-read command  
Exit self-refresh to read command  
tXSNR  
tXSRD  
t
RFC +10  
ns  
200  
nCK  
nCK  
Write command to DQS associated clock edges WL  
DDQ = 1.8 V ± 0.1V; VDD = 1.8 V ± 0.1 V.  
RL–1  
1)  
V
2) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down  
and then restarted through the specified initialization sequence before normal operation can continue.  
3) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.  
4) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,  
input reference level is the crosspoint when in differential strobe mode. The input reference level for signals other than CK/CK, DQS/DQS,  
RDQS / RDQS is defined.  
5) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
6) The output timing reference voltage level is VTT  
.
Rev. 1.3, 2007-07  
52  
03062006-ZNH8-HURV  
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