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HYB18T1G160C4F-25F 参数 Datasheet PDF下载

HYB18T1G160C4F-25F图片预览
型号: HYB18T1G160C4F-25F
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 58 页 / 1898 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18T1G[40/80/16]0C4F  
1-Gbit Double-Data-Rate-Two SDRAM  
5.6  
Overshoot and Undershoot Specification  
This chapter contains Overshoot and Undershoot Specification.  
TABLE 30  
AC Overshoot / Undershoot Specification for Address and Control Pins  
Parameter  
DDR2-667  
DDR2-800  
Unit  
Maximum peak amplitude allowed for overshoot area  
Maximum peak amplitude allowed for undershoot area  
Maximum overshoot area above VDD  
0.5  
0.5  
0.8  
0.8  
0.5  
V
0.5  
V
0.66  
0.66  
V-ns  
V-ns  
Maximum undershoot area below VSS  
FIGURE 6  
AC Overshoot / Undershoot Diagram for Address and Control Pins  
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Rev. 1.01, 2008-11  
34  
04212008-66HT-ZLFE  
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