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HYB18T1G800BFL-3S 参数 Datasheet PDF下载

HYB18T1G800BFL-3S图片预览
型号: HYB18T1G800BFL-3S
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位双数据速率- SDRAM双 [1-Gbit Double-Data-Rate-Two SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 70 页 / 3842 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]18T1G[40/80/16]0B[C/F](L)  
1-Gbit Double-Data-Rate-Two SDRAM  
5.6  
Overshoot and Undershoot Specification  
This chapter contains overshoot and undershoot specification.  
TABLE 41  
AC Overshoot / Undershoot Specification for Address and Control Pins  
Parameter  
DDR2-400  
DDR2-533  
DDR2-667  
DDR2-800  
Unit  
Maximum peak amplitude allowed for overshoot area  
Maximum peak amplitude allowed for undershoot area  
Maximum overshoot area above VDD  
0.9  
0.9  
0.9  
0.9  
V
0.9  
0.9  
0.9  
0.9  
V
1.33  
1.33  
1.00  
1.00  
0.80  
0.80  
0.66  
0.66  
V.ns  
V.ns  
Maximum undershoot area below VSS  
FIGURE 6  
AC Overshoot / Undershoot Diagram for Address and Control Pins  
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Rev. 1.2, 2007-05  
37  
03062006-ZNH8-HURV  
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