HYB18H512321AF
512-Mbit GDDR3
Electrical Characteristics
5.10.2
Operating Current Ratings (HYB18H512321AFL14/16/20)
Table 36
Operating Current Ratings ( 0 °C ≤ Tc ≤ 85 °C)
Parameter
Symbol
Values
–16
Unit Notes
–14
typ.
406
384
218
283
257
220
369
648
521
514
328
8
–20
typ.
367
346
192
250
228
195
328
610
466
472
290
8
typ.
328
315
167
218
199
169
286
501
403
386
252
8
Operating Current
Operating Current
IDD0
IDD1
mA 1),2),3)
mA 1),2),3)
mA 1),2),3)
mA 1),2),3)
mA 1),2),3)
mA 1),2),3)
mA 1),2),3)
mA 1),2),3)
mA 1),2),3)
mA 1),2),3)
mA 1),2),3)
mA 1),2),3),4)
mA 1),2),3)
Precharge Power-Down Standby Current
Precharge Floating Standby Current
Precharge Quiet Standby Current
Active Power-Down Standy Current
Active Standby Current
Operating Current Burst Read
Operating Current Burst Write
Auto-Refresh Current (tRC=min(tRFC))
Auto-Refresh Current at tREFI
Self Refresh Current
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5B
IDD5D
IDD6
Operating Current
IDD7
654
627
600
1) IDD specifications are tested after the device is properly initialized.
2) Input slew rate = 3V/ns.
3) Measured with Output open and On Die termination off.
4) Enables on-chip refresh and address counter.
Data Sheet
89
Rev. 1.73, 2005-08
05122004-B1L1-JEN8
QIMONDA [ QIMONDA AG ]
