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HYB18H1G321AF-11 参数 Datasheet PDF下载

HYB18H1G321AF-11图片预览
型号: HYB18H1G321AF-11
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous Graphics RAM Module, 32MX32, 0.22ns, CMOS, PBGA136, GREEN, PLASTIC, TFBGA-136]
分类和应用: 时钟动态存储器内存集成电路
文件页数/大小: 47 页 / 1480 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18H1G321AF–10/11/14  
1-Gbit GDDR3 Graphics RAM  
2.1  
Ball Definition and Description  
TABLE 2  
Ball Description  
Ball  
Type  
Detailed Function  
Clock:  
CLK, CLK  
Input  
CLK and CLK are differential clock inputs. Address and command inputs are latched on the positive  
edge of CLK. Graphics SDRAM outputs (RDQS, DQs) are referenced to CLK. CLK and CLK are not  
internally terminated.  
CKE  
Input  
Clock Enable:  
CKE HIGH activates and CKE LOW deactivates the internal clock and input buffers. Taking CKE  
LOW provides Power Down. If all banks are precharged, this mode is called Precharge Power Down  
and Self Refresh mode is entered if a Auto Refresh command is issued. If at least one bank is open,  
Active Power Down mode is entered and no Self Refresh is allowed. All input receivers except CLK,  
CLK and CKE are disabled during Power Down. In Self Refresh mode the clock receivers are  
disabled too. Self Refresh Exit is performed by setting CKE asynchronously HIGH. Exit of Power  
Down without Self Refresh is accomplished by setting CKE HIGH with a positive edge of CLK.  
The value of CKE is latched asynchronously by Reset during Power On to determine the value of the  
termination resistor of the address and command inputs.  
CKE is not allowed to go LOW during a RD, a WR or a snoop burst.  
CS0  
CS1  
Input  
Chip Select:  
CS0 enables the command decoder when low and disables it when high. When the command  
decoder is disabled, new commands with the exception of DTERDIS are ignored, but internal  
operations continue. In 2-CS mode, CS0 is exclusively used for MRS, EMRS and SREFEN.  
Input  
Input  
I/O  
Chip Select:  
CS1 is only evaluated in 2-CS mode, and it is used as the chip-select signal for the second memory  
block.  
RAS, CAS,  
WE  
Command Inputs:  
Sampled at the positive edge of CLK, CAS, RAS, and WE define (together with corresponding CS)  
the command to be executed.  
DQ<0:31>  
DM<0:3>  
Data Input/Output:  
The DQ signals form the 32 bit data bus. During READs the balls are outputs and during WRITEs  
they are inputs. Data is transferred at both edges of RDQS.  
Input  
Input Data Mask:  
The DM signals are input mask signals for WRITE data. Data is masked when DM is sampled HIGH  
with the WRITE data. DM is sampled on both edges of WDQS. DM0 is for DQ<0:7>, DM1 is for  
DQ<8:15>, DM2 is for DQ<16:23> and DM3 is for DQ<24:31>. Although DM balls are input-only,  
their loading is designed to match the DQ and WDQS balls.  
RDQS<0:3> Output Read Data Strobes:  
RDQSx are unidirectional strobe signals. During READs the RDQSx are transmitted by the Graphics  
SDRAM and edge-aligned with data. RDQS have preamble and postamble requirements. RDQS0 is  
for DQ<0:7>, RDQS1 for DQ<8:15>, RDQS2 for DQ<16:23> and RDQS3 for DQ<24:31>.  
WDQS<0:3> Input  
Write Data Strobes:  
WDQSx are unidirectional strobe signals. During WRITEs the WDQSx are generated by the  
controller and center aligned with data. WDQS have preamble and postamble requirements.  
WDQS0 is for DQ<0:7>, WDQS1 for DQ<8:15>, WDQS2 for DQ<16:23> and WDQS3 for  
DQ<24:31>.  
Rev. 1.0, 2008-02  
06122007-MW7D-3G3M  
8
Date: 2008-02-15