PY291A
MAXIMUM RATINGS(1)
Symbol
TA
Parameter
Value
Unit
Symbol
Parameter
Value
Unit
Operating Temperature –55 to +125 °C
VCC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
TBIAS
Temperature Under
Bias
–55 to +125
°C
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
VCC +0.5
VTERM
VPP
V
V
TSTG
PT
Storage Temperature
Power Dissipation
DC Output Current
–65 to +150
°C
W
1.0
50
Program Voltage
13
IOUT
mA
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)
RECOMMENDED OPERATING CONDITIONS
(2)
Grade
Ambient Temp
Gnd
Vcc
Symbol
CIN
Parameter
Conditions Typ. Unit
Commercial
0°C to 70°C
0V 5.0V ±10%
0V 5.0V ±10%
Input Capacitance VIN = 0V
Output Capacitance VOUT= 0V
10 pF
10 pF
Military
-55°C to +125°C
COUT
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
PY291A
Symbol
Parameter
Test Conditions
Unit
Min
Max
Input High Voltage
2.0
VCC
VIH
V
V
V
VIL
VHC
VLC
Input Low Voltage
–0.5(3)
0.8
VCC –0.2
VCC +0.5
CMOS Input High Voltage
CMOS Input Low Voltage
–0.5(3)
0.2
0.4
V
V
Output Low Voltage (TTL Load) IOL = +16 mA, VCC = Min.
VOL
VOH
Output High Voltage (TTL Load) IOH = –4 mA, VCC = Min.
2.4
V
VCC = Max.
Input Leakage Current
ILI
–10
+10
+10
µA
VIN = GND to VCC
VCC = Max., CE = VIH,
Output Leakage Current
µA
ILO
–10
12
VOUT = GND to VCC
Programming Supply Voltage
Programming Supply Current
Input HIGH Programming Voltage
Input LOW Programming Voltage
13
50
V
mA
V
VPP
IPP
VIHP
VILP
3.0
0.4
V
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
Temperature Range
Commercial
Military
–20
–25
–35
–50
Unit
120
N/A
90
90
90
90
90
mA
mA
ICC
Dynamic Operating Current*
N/A
Document # EPROM101 REV OR
Page 2 of 9
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
