P4C1024
MAꢀIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
Symbol
Parameter
Value
Unit
TBIAS
Temperature Under
Bias
–55 to +125
°C
VCC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
TSTG
PT
Storage Temperature
Power Dissipation
DC Output Current
–65 to +150
°C
W
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
VCC +0.5
VTERM
V
1.0
IOUT
50
mA
TA
Operating Temperature –55 to +125 °C
CAPACITANCES(4)
VCC = 5.0V, TA = 25°C, f = 1.0MHz
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLꢁ VOLTAGE
Ambient
Temperature
Grade(2)
GND
Symbol
Parameter
Conditions Typ. Unit
VCC
Military
5.0V ± 10%
5.0V ± 10%
5.0V ± 10%
CIN
–55°C to +125°C
–40°C to +85°C
0°C to +70°C
0V
0V
0V
VIN = 0V
pF
pF
Input Capacitance
Output Capacitance
8
Industrial
COUT
VOUT = 0V
10
Commercial
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
P4C1024
P4C1024L
Symbol
Parameter
Test Conditions
Unit
Min
Max
Min
Max
2.2
VCC +0.5
2.2
VCC +0.5
VIH
VIL
Input High Voltage
Input Low Voltage
V
V
V
–0.5(3)
0.8
–0.5(3)
0.8
VCC –0.2 VCC +0.5 VCC –0.2 VCC +0.5
VHC
VLC
CMOS Input High Voltage
CMOS Input Low Voltage
–0.5(3)
0.2
–0.5(3)
0.2
V
V
VCD
VOL
–1.2
–1.2
VCC = Min., IIN = –18 mA
IOL = +8 mA, VCC = Min.
Input Clamp Diode Voltage
Output Low Voltage
(TTL Load)
V
V
0.4
0.4
Output High Voltage
(TTL Load)
VOH
IOH = –4 mA, VCC = Min.
2.4
2.4
VCC = Max.
Mil.
–10
–5
+10
+5
–5
n/a
+5
n/a
ILI
Input Leakage Current
Output Leakage Current
µA
VIN = GND to VCC
Ind./Com’l.
Mil.
VCC = Max., CE = VIH,
–10
–5
+10
+5
–5
n/a
+5
n/a
µA
ILO
VOUT = GND to VCC Ind./Com’l.
___
___
___
___
mA
CE1 ≥ VIH or
CE2 ≤VIL,
VCC= Max,
Mil.
Ind./Com’l.
35
30
25
n/a
Standby Power Supply
Current (TTL Input Levels)
ISB
f = Max., Outputs Open
___
___
___
___
25
20
2
n/a
mA
CE1 ≥ VHC or
CE2 ≤VLC,
VCC= Max,
Mil.
Ind./Com’l.
Standby Power Supply
Current
ISB1
(CMOS Input Levels)
f = 0, Outputs Open
VIN ≤ VLC or VIN ≥ VHC
Notes:
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20ns.
4. This parameter is sampled and not 100% tested.
1. Stresses greater than those listed under MAꢀIMꢁM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAꢀIMꢁM rating conditions for extended
Document # SRAM124 REV C
Page 2 of 14
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
