P3C1256
RECOMMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE
Temperature Range (Ambient)
Commercial (0°C to 70°C)
Supply Voltage
3.0V ≤ VCC ≤ 3.6V
3.0 ≤ VCC ≤ 3.6V
Industrial (-40°C to 85°C)
MAXIMUM RATINGS(1)
Stresses greater than those listed can cause permanent damage to the device. These are absolute stress ratings
only. Functional operation of the device is not implied at these or any other conditions in excess of those given in
the operational sections of this data sheet. Exposure to Maximum Ratings for extended periods can adversely
affect device reliability.
Symbol
Parameter
Supply Voltage with Respect to GND
Terminal Voltage with Respect to GND (up to 7.0V)
Operating Ambient Temperature
Storage Temperature
Min
-0.5
-0.5
-40
Max
Unit
VCC
VTERM
TA
7.0
VCC + 0.5
85
V
V
°C
STG
IOUT
ILAT
-55
125
25
°C
mA
mA
Output Current into Low Outputs
Latch-up Current
>200
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)(2)
Max
Symbol
Parameter
Test Conditions
Min
Unit
VOH
Output High Voltage
(I/O0 - I/O7)
IOH = –4mA, VCC = 3.0V
2.4
V
VOL
Output Low Voltage
(I/O0 - I/O8)
IOL = 8 mA
IOL = 10 mA
0.4
0.5
V
V
Input High Voltage
Input Low Voltage
Input Leakage Current
2.2
-0.5(3)
-5
VCC + 0.3
0.8
V
V
VIH
VIL
GND ≤ VIN ≤ VCC
+5
µA
µA
ILI
GND ≤ VOUT ≤ VCC
CE = VCC
Output Leakage Current
ILO
-5
+5
20
VCC Current
TTL Standby Current
VCC = 3.6V, IOUT = 0 mA
ISB
mA
mA
CE = VCC
VCC = 3.6V, IOUT = 0 mA
VCC Current
CMOS Standby Current
ISB1
3
CE = VCC
Document # SRAM122 REV B
Page 2 of 10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
