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P3C125620JC 参数 Datasheet PDF下载

P3C125620JC图片预览
型号: P3C125620JC
PDF下载: 下载PDF文件 查看货源
内容描述: 高速32K ×8 3.3V CMOS静态RAM [HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM]
分类和应用:
文件页数/大小: 10 页 / 266 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P3C1256  
AC CHARACTERISTICS—WRITE CYCLE  
(Over Recommended Operating Temperature & Supply Voltage)  
-12  
-15  
-20  
-25  
Unit  
Symbol  
Parameter  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
tWC  
tCW  
Write Cycle Time  
12  
15  
20  
25  
ns  
ns  
Chip Enable Time to  
End of Write  
10  
10  
0
12  
12  
0
15  
18  
18  
0
tAW  
tAS  
Address Valid to  
End of Write  
ns  
ns  
15  
0
Address Set-up  
Time  
tWP  
9
0
11  
0
15  
0
18  
0
Write Pulse Width  
Address Hold Time  
ns  
ns  
tAH  
Data Valid to End of  
Write  
tDW  
ns  
ns  
ns  
8
0
10  
0
12  
0
15  
0
tDH  
tWZ  
Data Hold Time  
Write Enable to  
Output in High Z  
7
8
10  
11  
Output Active from  
End of Write  
tOW  
3
3
3
3
ns  
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE CONTROLLED)(10,11)  
Notes:  
10. CE and WE must be LOW for WRITE cycle.  
in a high impedance state  
11. OE is LOW for this WRITE cycle to show tWZ and tOW  
12. If CE goes HIGH simultaneously with WE HIGH, the output remains  
.
13. Write Cycle Time is measured from the last valid address to the first  
transitioning address.  
Document # SRAM122 REV B  
Page 5 of 10