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P3C1256L 参数 Datasheet PDF下载

P3C1256L图片预览
型号: P3C1256L
PDF下载: 下载PDF文件 查看货源
内容描述: [LOW POWER 32K x 8 STATIC CMOS RAM]
分类和应用:
文件页数/大小: 11 页 / 760 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P3C1256L  
LOW POWER 32K x 8  
STATIC CMOS RAM  
FEATURES  
VCC Current (Commercial/Industrial)  
— Operating: 70mA/85mA  
— CMOS Standby: 100µA/100µA  
Three-State Outputs  
Fully TTL Compatible Inputs and Outputs  
Advanced CMOS Technology  
Automatic Power Down  
Packages  
Access Times  
—55/70/85  
— 28-Pin 600 mil DIP  
— 28-Pin 330 mil SOP  
— 28-Pin TSOP  
Wide Range Power Supply: 2.7V to 3.6V  
Easy Memory Expansion Using CE and OE Inputs  
Common Data I/O  
DESCRIPTIOꢀ  
The P3C1256L is a 262,144-bit low power CMOS  
static RAM organized as 32Kx8. The CMOS memory  
requires no clocks or refreshing, and has equal access and  
cycle times. Inputs are fully TTL-compatible. The RAM  
operates with a wide range power supply (2.7V to 3.6V).  
with matching access and cycle times. Memory locations  
are specified on address pinsA0 toA14. Reading is accom-  
plished by device selection (CE and output enabling (OE)  
while write enable (WE) remains HIGH. By presenting the  
address under these conditions, the data in the addressed  
memory location is presented on the data input/output pins.  
The input/output pins stay in the HIGH Z state when either  
CE or OE is HIGH or WE is LOW.  
Access times of 55 ns and 70 ns are available. CMOS is  
utilized to reduce power consumption to a low level.  
The P3C1256L device provides asynchronous operation  
FUꢀCTIOꢀAL BLOCꢁ DIAꢂRAM  
PIꢀ COꢀFIꢂURATIOꢀS  
DIP (P6), SOP (S11-3)  
TOP VIEW  
Document # SRAM143 REV A  
Revised October 2011