May 2008
PCS2P2305NZ
rev 0.1
Operating Conditions
Parameter
Description
Min
3.0
0
Max
3.6
70
85
Unit
V
VDD
Supply Voltage
Commercial Temp.
Industrial Temp.
°C
°C
pF
pF
pF
TA
-40
Load Capacitance, Fout < 100MHz
Load Capacitance,100MHz < Fout < 133.33MHz
Input Capacitance
30
CL
15
CIN
7
BUF_IN,
OUTPUT
[1:5]
Operating Frequency
DC
133.33
50
MHz
mS
Power-up time for all VDD's to reach minimum specified voltage (power
ramps must be monotonic)
tPU
0.05
Electrical Characteristics for Commercial and Industrial Temperature Devices
Test Conditions
Min
Max
Unit
V
Symbol
Parameter
VIL
VIH
IIL
Input LOW Voltage1
Input HIGH Voltage1
Input LOW Current
Input HIGH Current
Output LOW Voltage2
0.8
2.2
V
VIN = 0V
VIN= VDD
50.0
100.0
0.4
µA
µA
V
IIH
VOL
IOL= 12 mA
VOH
IDD
Output HIGH Voltage2
IOH = -12 mA
2.4
V
Commercial temp.
Industrial temp.
30
32
Supply
Current
Unloaded outputs at 66.66MHz
mA
Switching Characteristics for Commercial and Industrial Temperature Devices3
Test Conditions
Symbol
Parameter
Rise Time2
Fall Time2
Min
Typ
1.5
Max
Unit
nS
t3
t4
Measured between 0.8V and 2.0V
Measured between 2.0V and 0.8V
2
2
1.5
nS
Measured at 1.4V (For an Input
Clock Duty Cycle 50%)
tD
Duty Cycle2= t2 ÷t1
45
50
55
%
t5
Output to Output Skew2
All outputs equally loaded
Measured at VDD/2
±250
pS
Propagation Delay,
t6
BUF_IN Rising Edge to
4
6
nS
OUTPUT Rising Edge2
Note:
1. BUF_IN input has a threshold voltage of VDD/2.
2. Parameter is guaranteed by design and characterization. It is not 100% tested in production.
3. All parameters specified with loaded outputs.
3.3V 1:5 Clock Buffer
3 of 8
Notice: The information in this document is subject to change without notice.
PULSECORE [ PulseCore Semiconductor ]
