April 2008
rev 1.6
Operating Conditions
Symbol
VDD
T
A
C
L
C
IN
Operating temperature
Load Capacitance
Input Capacitance
ASM3P2811A/B
ASM3P2812A/B
ASM3P2814A/B
Parameter
Voltage on any pin with respect to GND
Min
3.0
-40
Max
3.6
+85
10
7
Unit
V
°C
pF
pF
DC Electrical Characteristics
Symbol
V
IL
V
IH
I
IL
I
IH
I
XOL
I
XOH
V
OL
V
OH
I
CC
I
DD
VDD
t
ON
Z
OUT
Input low voltage
Input high voltage
Input low current
(Inputs D_C, SRS and FRS are pulled high internally)
Input high current
XOUT Output low current
(V
XOL
@ 0.4V, V
DD
= 3.3V)
XOUT Output high current
(V
XOH
@ 2.5V, V
DD
= 3.3V)
Output low voltage (V
DD
= 3.3V, I
OL
= 5mA)
Output high voltage (V
DD
= 3.3V, I
OH
= -5mA)
Dynamic supply current (Unloaded Output)
Static supply current , Standby mode
(CLKIN pulled to GND)
Operating voltage
Power up time (first locked clock cycle after power up)
Clock out impedance
76
3.0
3.3
2.5
8
18
4.5
3.6
500
Parameter
Min
VSS – 0.3
2
Typ
Max
0.8
V
DD
+ 0.3
-50
50
3
3
0.4
Unit
V
V
µA
µA
mA
mA
V
V
mA
mA
V
µS
Ω
AC Electrical Characteristics
Symbol
f
IN
Parameter
Input frequency for ASM3P2811/12/13/14 A/B
Output frequency for ASM3P2811A/B
Min
10
10
20
40
0.5
0.8
Typ
Max
40
40
80
160
Unit
MHz
MHz
MHz
MHz
nS
nS
pS
f
OUT
Output frequency for ASM3P2812A/B
Output frequency for ASM3P2814A/B
t
LH
*
t
HL
*
t
JC
t
D
Output rise time (measured at 0.8V to 2.0V)
Output fall time (measured at 2.0V to 0.8V)
Cycle to Cycle Jitter (Unloaded Output)
Output duty cycle
0.9
1.0
±250
1.2
1.3
45
50
55
%
* t
LH
and t
HL
are measured into a capacitive load of 10pF
Low Power EMI Reduction IC
Notice: The information in this document is subject to change without notice.
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PULSECORE [ PulseCore Semiconductor ]
