February 2007
rev 0.2
ASM3P2111B
DC Electrical Characteristics
Parameter
Symbol
Conditions / Description
Min
Typ
Max
Unit
Overall
Supply Current,
Dynamic
Supply Current,
Static
IDD
VDD=3.3V, FCLK =25MHz, CL=15pF
VDD = 3.3V, Clock Input = 0
41
20
48
25
62
35
mA
mA
IDDL
All input pins
High-Level Input
Voltage
Low-Level Input
Voltage
VIH
VIL
IIH
VDD=3.3V
VDD=3.3V
2.0
-
-
VDD+0.3
V
VSS-0.3
0.8
1
V
High-Level Input
Current
µ A
-1
-20
-
-
Low-Level Input
Current (pull-up)
High-Level Output
Source Current
Low-Level Output
Sink Current
µ A
IIL
-36
3
-80
-
IxOH
IxOL
VDD=V (XIN) = 3.3V, VO=0.4V
VDD=3.3V, V (XIN)=VO=2.5V
mA
mA
-
3
-
Clock Outputs
High-Level Output
Source Current
Low-Level Output
Sink Current
IOH
IOL
VO=2.5V
VO=0.4V
-
-
-20
23
-
-
mA
mA
Ω
ZOH
ZOL
VO=0.5 VDD; output driving high
Vo=0.5 VDD; output driving low
-
-
29
27
-
-
Output Impedance
AC Electrical Characteristics
Parameter
Symbol
Conditions/ Description
VO = 0.8V to 2.0V;
CL = 15pF
Min
Typ
Max
Unit
Rise Time
tr
300
800
900
pS
VO = 2.0V to 0.8V;
CL = 15pF
Ratio of pulse width (as measured from
rising edge to next falling edge at VDD /2) to
one clock period
Fall Time
tf
360
45
800
900
55
pS
%
Clock Duty
Cycle
-
* CL = 15 pF, Input clock frequency = 25MHz
Peak Reducing EMI Solution
4 of 8
Notice: The information in this document is subject to change without notice.
PULSECORE [ PulseCore Semiconductor ]
