February 2007
rev 0.2
DC Electrical Characteristics
Parameter
Overall
Supply Current,
Dynamic
Supply Current,
Static
All input pins
High-Level Input
Voltage
Low-Level Input
Voltage
High-Level Input
Current
Low-Level Input
Current (pull-up)
High-Level Output
Source Current
Low-Level Output
Sink Current
Clock Outputs
High-Level Output
Source Current
Low-Level Output
Sink Current
Output Impedance
I
OH
I
OL
Z
OH
Z
OL
V
O
=2.5V
V
O
=0.4V
V
O
=0.5 V
DD
; output driving high
Vo=0.5 V
DD
; output driving low
-
-
-
-
-20
23
29
27
V
IH
V
IL
I
IH
I
IL
I
xOH
I
xOL
V
DD
=V (XIN) = 3.3V, V
O
=0.4V
V
DD
=3.3V, V (XIN)=V
O
=2.5V
V
DD
=3.3V
V
DD
=3.3V
2.0
V
SS
-0.3
-1
-20
-
-
-
-
-
-36
3
3
I
DD
I
DDL
V
DD
=3.3V, F
CLK
=25MHz, C
L
=15pF
V
DD
= 3.3V, Clock Input = 0
41
20
48
25
ASM3P2111B
Symbol
Conditions / Description
Min
Typ
Max
Unit
62
35
mA
mA
V
DD
+0.3
0.8
1
-80
-
-
V
V
µ
A
µ
A
mA
mA
-
-
-
-
mA
mA
Ω
AC Electrical Characteristics
Parameter
Rise Time
Fall Time
Clock Duty
Cycle
Symbol
t
r
t
f
Conditions/ Description
V
O
= 0.8V to 2.0V;
C
L
= 15pF
V
O
= 2.0V to 0.8V;
C
L
= 15pF
Ratio of pulse width (as measured from
rising edge to next falling edge at V
DD
/2) to
one clock period
Min
300
360
Typ
800
800
Max
900
900
Unit
pS
pS
45
-
55
%
* C
L
= 15 pF, Input clock frequency = 25MHz
Peak Reducing EMI Solution
Notice: The information in this document is subject to change without notice.
4 of 8
PULSECORE [ PulseCore Semiconductor ]
