November 2006
rev 0.3
Electrical Characteristics
Over recommended operating free-air temperature range (unless otherwise noted)
ASM2P2310A
Symbol
V
IK
I
I
I
DD2
C
I
C
O
Parameter
Input voltage
Input current
Static device current
Input capacitance
Output capacitance
V
DD
= 3V,
V
I
= 0V or V
DD
Test Conditions
I
I
= -18 mA
I
O
= 0 mA
V
I
= 0V or V
DD
V
I
= 0V or V
DD
Min
Typ
1
Max
-1.2
±5
80
Unit
V
µA
µA
pF
pF
CLK = 0V or V
DD
,
V
DD
= 2.3V to 3.6V,
V
DD
= 2.3V to 3.6V,
2.5
2.8
Note: 1 All typical values are at respective nominal V
DD
.
2 For I
CC
over frequency, see Figure 6.
V
DD
= 3.3 V
±
0.3 V
Symbol
V
OH
Parameter
High-level output voltage
Test Conditions
V
DD
= Min to Max,
V
DD
= 3 V
I
OH
= -100 µA
I
OH
= -12 mA
I
OH
= -6 mA
I
OL
= -100 µA
I
OL
= 12mA
I
OL
= 6 mA
V
O
= 1V
V
O
= 1.65V
V
O
= 3.135V
V
O
= 1.95V
V
O
= 1.65V
V
O
= 0.4V
Min
V
DD
- 0.2
2.1
2.4
Typ
1
Max
Unit
V
V
DD
= Min to Max,
V
OL
Low-level output voltage
V
DD
= 3V
V
DD
= 3V,
I
OH
High-level output current
V
DD
= 3.3V,
V
DD
= 3.6V,
V
DD
= 3V,
I
OL
Low-level output current
V
DD
= 3.3V,
V
DD
= 3.6V,
Note: 1 All typical values are at respective nominal V
DD
.
0.2
0.8
0.55
-28
-36
-14
28
36
14
mA
mA
V
V
DD
= 2.5 V
±0.2
V
Symbol
V
OH
V
OL
Parameter
High-level output voltage
Low-level output voltage
Test Conditions
V
DD
= Min to Max,
V
DD
= 2.3V
V
DD
= Min to Max,
V
DD
= 2.3V
V
DD
= 2.3V,
V
DD
= 2.5V,
V
DD
= 2.7V,
V
DD
= 2.3V,
I
OH
= -100 µA
I
OH
= -6 mA
I
OL
= 100 µA
I
OL
= 6 mA
V
O
= 1V
V
O
= 1.25V
V
O
= 2.375V
V
O
= 1.2V
V
O
= 1.25V
V
O
= 0.3V
Min
V
DD
- 0.2
1.8
Typ
1
Max
Unit
V
0.2
0.55
-17
-25
-10
17
25
10
V
I
OH
High-level output current
mA
I
OL
Low-level output current
V
DD
= 2.5V,
V
DD
= 2.7V,
mA
Note: 1 All typical values are at respective nominal V
DD
.
2.5-V TO 3.3-V High-Performance Clock Buffer
Notice: The information in this document is subject to change without notice.
5 of 11
PULSECORE [ PulseCore Semiconductor ]
