ECO-PAC
TM
2
HiPerFET
TM
Power MOSFET
in ECO-PAC 2
PSMG 50/05*
(Electrically Isolated Back Surface)
Single MOSFET Die
X18
I K10
A1
LN9
I
D25
V
DSS
R
DSon
t
rr
= 43 A
= 500 V
= 100 mΩ
Ω
< 250 ns
Preliminary Data Sheet
K13
K15
*NTC optional
MOSFET
Symbol
V
DSS
V
GS
I
D25
I
D90
dv/dt
E
AS
E
AR
T
C
= 25°C
T
C
= 90°C
V
DS
< V
DSS
; I
F
≤
50A;di
F
/dt≤ 100A/µs
T
VJ
= 150°C
I
D
= 10 A; L = 36 mH; T
C
= 25°C
I
D
= 20 A; L = 5 µH; T
C
= 25°C
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
500
±20
43
tbd
5
3
60
V
V
A
A
V/ns
J
mJ
Features
•
ECO-PAC 2 with DCB Base
- Electrical isolation towards the
heatsink
- Low coupling capacitance to the
heatsink for reduced EMI
- High power dissipation
- High temperature cycling capability
of chip on DCB
- solderable pins for DCB mounting
•
fast CoolMOS power MOSFET
- 2
nd
generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
100
2
4
m
Ω
V
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
R
thJC
V
GS
= 10 V; I
D
= I
D90
V
DS
= 20 V; I
D
= 8 mA;
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
GS
= ±20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 250 V; I
D
= 50 A
100 µA
2 mA
100
330
55
155
45
60
120
45
nA
nC
nC
nC
ns
ns
ns
ns
V
0.3 K/W
•
Enhanced total power density
•
UL certified, E 148688
Applications
•
Switched mode power supplies
•
•
•
•
(SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
Inductive heating
V
GS
= 10 V; V
DS
= 380 V;
I
D
= 25 A; R
G
= 1.8
Ω
(reverse conduction) I
F
= 20 A; V
GS
= 0 V
per MOSFET
Caution:
These Devices are
sensitive to electrostatic
discharge. Users should observe
proper ESD handling precautions.
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20