Symbol
I
RRM
, I
DRM
V
T
, V
F
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
I
T
, I
F
= 300 A; T
VJ
= 25°C
For power-loss calculations only (T
VJ
= 125°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= T
VJM
;
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
V
D
= 2/3 V
DRM
Characteristic Values
5
1.5
0.8
2.4
2.5
2.6
150
200
0.2
10
450
200
2
185
170
45
0.22
0.11
0.42
0.21
12.7
9.6
50
mA
V
V
mΩ
V
V
mA
mA
V
mA
mA
mA
µs
Fig. 1 Gate trigger characteristics
µs
µC
A
K/W
K/W
K/W
K/W
mm
mm
m/s
2
T
VJ
= 25°C; t
P
= 10 µs; V
D
= 6 V
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
∞
T
VJ
= 25°C; V
D
= 1/2 V
DRM
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
T
VJ
= T
VJM
; I
T
= 150 A, t
P
= 200 µs; -di/dt = 10 A/µs typ.
V
R
= 100 V; dv/dt = 20 V/µs; V
D
= 2/3 V
DRM
T
VJ
= T
VJM
; I
T
, I
F
= 50 A, -di/dt = 6 A/µs
per
per
per
per
thyristor/diode; DC current
module
thyristor/diode; DC current
module
other values
see Fig. 8/9
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
PSKT/ PSKH Version 1
PSKT Version 8
PSKH Version 8
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
POWERSEM [ POWERSEM GMBH ]
